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1.发明授权Transistors for replacing metal-oxide semiconductor field-effect transistors in nanoelectronics 有权用于替代纳米电子学中的金属氧化物半导体场效应晶体管的晶体管公开(公告)号：US07772056B2
公开(公告)日：2010-08-10
申请号：US12141473
申请日：2008-06-18
IPC分类号： H01L29/80
CPC分类号： H01L21/8232 , H01L27/098
摘要： Junction field effect transistors (JFETs) are shown to be a viable replacement for metal oxide semiconductor field effect transistors (MOSFETs) for gate lengths of less than about 40 nm, providing an alternative to the gate leakage problems presented by scaled down MOSFETs. Integrated circuit designs can have complementary JFET (CJFET) logic cells substituted for existing MOSFET-based logic cells to produce revised integrated circuit designs. Integrated circuits can include JFETS where the channel comprises a wide bandgap semiconductor material and the gate comprises a narrow bandgap semiconductor material. Mixtures of JFET and MOSFET transistors can be included on an integrated circuit design.
摘要翻译： 结栅场效应晶体管（JFET）被证明是栅极长度小于约40nm的金属氧化物半导体场效应晶体管（MOSFET）的可行替代品，为缩小MOSFET的栅极泄漏问题提供了替代方案。 集成电路设计可以具有替代现有的基于MOSFET的逻辑单元的互补JFET（CJFET）逻辑单元，以产生经修订的集成电路设计。 集成电路可以包括JFET，其中沟道包括宽带隙半导体材料，并且栅极包括窄带隙半导体材料。 JFET和MOSFET晶体管的混合可以包含在集成电路设计中。
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2.发明申请TRANSISTORS FOR REPLACING METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN NANOELECTRONICS 审中-公开用于替代纳米电子学中的金属氧化物半导体场效应晶体管的晶体管公开(公告)号：US20120309142A1
公开(公告)日：2012-12-06
申请号：US13560329
申请日：2012-07-27
IPC分类号： G06F17/50 , H01L21/337
CPC分类号： H01L21/8232 , H01L27/098
摘要： Junction field effect transistors (JFETs) are shown to be a viable replacement for metal oxide semiconductor field effect transistors (MOSFETs) for gate lengths of less than about 40 nm, providing an alternative to the gate leakage problems presented by scaled down MOSFETs. Integrated circuit designs can have complementary JFET (CJFET) logic cells substituted for existing MOSFET-based logic cells to produce revised integrated circuit designs. Integrated circuits can include JFETS where the channel comprises a wide bandgap semiconductor material and the gate comprises a narrow bandgap semiconductor material. Mixtures of JFET and MOSFET transistors can be included on an integrated circuit design.
摘要翻译： 结栅场效应晶体管（JFET）被证明是栅极长度小于约40nm的金属氧化物半导体场效应晶体管（MOSFET）的可行替代品，为缩小MOSFET的栅极泄漏问题提供了替代方案。 集成电路设计可以具有替代现有的基于MOSFET的逻辑单元的互补JFET（CJFET）逻辑单元，以产生经修订的集成电路设计。 集成电路可以包括JFET，其中沟道包括宽带隙半导体材料，并且栅极包括窄带隙半导体材料。 JFET和MOSFET晶体管的混合可以包含在集成电路设计中。
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3.发明授权Transistors for replacing metal-oxide-semiconductor field-effect transistors in nanoelectronics 有权用于替代纳米电子学中的金属氧化物半导体场效应晶体管的晶体管公开(公告)号：US08253168B2
公开(公告)日：2012-08-28
申请号：US12826480
申请日：2010-06-29
IPC分类号： H01L29/808
CPC分类号： H01L21/8232 , H01L27/098
摘要： Junction field effect transistors (JFETs) are shown to be a viable replacement for metal oxide semiconductor field effect transistors (MOSFETs) for gate lengths of less than about 40 nm, providing an alternative to the gate leakage problems presented by scaled down MOSFETs. Integrated circuit designs can have complementary JFET (CJFET) logic cells substituted for existing MOSFET-based logic cells to produce revised integrated circuit designs. Integrated circuits can include JFETS where the channel comprises a wide bandgap semiconductor material and the gate comprises a narrow bandgap semiconductor material. Mixtures of JFET and MOSFET transistors can be included on an integrated circuit design.
摘要翻译： 结栅场效应晶体管（JFET）被证明是栅极长度小于约40nm的金属氧化物半导体场效应晶体管（MOSFET）的可行替代品，为缩小MOSFET的栅极泄漏问题提供了替代方案。 集成电路设计可以具有替代现有的基于MOSFET的逻辑单元的互补JFET（CJFET）逻辑单元，以产生经修订的集成电路设计。 集成电路可以包括JFET，其中沟道包括宽带隙半导体材料，并且栅极包括窄带隙半导体材料。 JFET和MOSFET晶体管的混合可以包含在集成电路设计中。
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4.发明申请TRANSISTORS FOR REPLACING METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN NANOELECTRONICS 有权用于替代纳米电子学中的金属氧化物半导体场效应晶体管的晶体管公开(公告)号：US20100264425A1
公开(公告)日：2010-10-21
申请号：US12826480
申请日：2010-06-29
IPC分类号： H01L29/80 , H01L21/8232
CPC分类号： H01L21/8232 , H01L27/098
摘要： Junction field effect transistors (JFETs) are shown to be a viable replacement for metal oxide semiconductor field effect transistors (MOSFETs) for gate lengths of less than about 40 nm, providing an alternative to the gate leakage problems presented by scaled down MOSFETs. Integrated circuit designs can have complementary JFET (CJFET) logic cells substituted for existing MOSFET-based logic cells to produce revised integrated circuit designs. Integrated circuits can include JFETS where the channel comprises a wide bandgap semiconductor material and the gate comprises a narrow bandgap semiconductor material. Mixtures of JFET and MOSFET transistors can be included on an integrated circuit design.
摘要翻译： 结栅场效应晶体管（JFET）被证明是栅极长度小于约40nm的金属氧化物半导体场效应晶体管（MOSFET）的可行替代品，为缩小MOSFET的栅极泄漏问题提供了替代方案。 集成电路设计可以具有替代现有的基于MOSFET的逻辑单元的互补JFET（CJFET）逻辑单元，以产生经修订的集成电路设计。 集成电路可以包括JFET，其中沟道包括宽带隙半导体材料，并且栅极包括窄带隙半导体材料。 JFET和MOSFET晶体管的混合可以包含在集成电路设计中。
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5.发明申请TRANSISTORS FOR REPLACING METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN NANOELECTRONICS 有权用于替代金属氧化物半导体场效应晶体管在纳米电子学中的晶体管公开(公告)号：US20080308816A1
公开(公告)日：2008-12-18
申请号：US12141473
申请日：2008-06-18
IPC分类号： H01L27/06 , G06F17/50 , H01L21/8232
CPC分类号： H01L21/8232 , H01L27/098
摘要： Junction field effect transistors (JFETs) are shown to be a viable replacement for metal oxide semiconductor field effect transistors (MOSFETs) for gate lengths of less than about 40 nm, providing an alternative to the gate leakage problems presented by scaled down MOSFETs. Integrated circuit designs can have complementary JFET (CJFET) logic cells substituted for existing MOSFET-based logic cells to produce revised integrated circuit designs. Integrated circuits can include JFETS where the channel comprises a wide bandgap semiconductor material and the gate comprises a narrow bandgap semiconductor material. Mixtures of JFET and MOSFET transistors can be included on an integrated circuit design.
摘要翻译： 结栅场效应晶体管（JFET）被证明是栅极长度小于约40nm的金属氧化物半导体场效应晶体管（MOSFET）的可行替代品，为缩小MOSFET的栅极泄漏问题提供了替代方案。 集成电路设计可以具有替代现有的基于MOSFET的逻辑单元的互补JFET（CJFET）逻辑单元，以产生经修订的集成电路设计。 集成电路可以包括JFET，其中沟道包括宽带隙半导体材料，并且栅极包括窄带隙半导体材料。 JFET和MOSFET晶体管的混合可以包含在集成电路设计中。
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