发明申请
- 专利标题： SEMICONDUCTOR HETEROSTRUCTURE AND METHOD FOR FORMING SAME
- 专利标题（中）： 半导体结构及其形成方法
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申请号： US12827135申请日： 2010-06-30
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公开(公告)号： US20100264463A1公开(公告)日： 2010-10-21
- 发明人: Christophe Figuet , Mark Kennard
- 申请人： Christophe Figuet , Mark Kennard
- 优先权： EPEP05291841.4 20050907
- 主分类号： H01L29/12
- IPC分类号： H01L29/12
摘要：
The invention relates to a method for forming a semiconductor heterostructure by providing a substrate with a first in-plane lattice parameter a1, providing a buffer layer with a second in-plane lattice parameter a2 and providing a top layer over the buffer layer. In order to improve the surface roughness of the semiconductor heterostructure, an additional layer is provided in between the buffer layer and the top layer, wherein the additional layer has a third in-plane lattice parameter a3 which is in between the first and second lattice parameters.
公开/授权文献
- US08084784B2 Semiconductor heterostructure and method for forming same 公开/授权日：2011-12-27