发明申请
- 专利标题: INJECTION METHOD WITH SCHOTTKY SOURCE/DRAIN
- 专利标题(中): 注射方法与肖特源/排水
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申请号: US12430817申请日: 2009-04-27
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公开(公告)号: US20100271878A1公开(公告)日: 2010-10-28
- 发明人: Yi-Hsuan Hsiao , Erh-Kun Lai , Hang-Ting Lue
- 申请人: Yi-Hsuan Hsiao , Erh-Kun Lai , Hang-Ting Lue
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; H01L29/792 ; H01L21/336
摘要:
An injection method for non-volatile memory cells with a Schottky source and drain is described. Carrier injection efficiency is controlled by an interface characteristic of silicide and silicon. A Schottky barrier is modified by controlling an overlap of a gate and a source/drain and by controlling implantation, activation and/or gate processes.
公开/授权文献
- US08183617B2 Injection method with Schottky source/drain 公开/授权日:2012-05-22