发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12435306申请日： 2009-05-04
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公开(公告)号： US20100276810A1公开(公告)日： 2010-11-04
- 发明人: Jui-Chun Chang , Ying-cheng Chen
- 申请人： Jui-Chun Chang , Ying-cheng Chen
- 申请人地址： TW HSINCHU
- 专利权人： VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人： VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人地址： TW HSINCHU
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/768
摘要：
A semiconductor device is provided. A substrate is provided. A buried layer is formed in the substrate. The buried layer comprises an insulating region. A deep trench contact structure is formed in the substrate. The deep trench contact structure comprises a conductive material and a liner layer formed on a side wall of the conductive material. The conductive material is electrically connected with the substrate.
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