发明申请
US20100277230A1 TRANSISTOR JUNCTION DIODE CIRCUITRY SYSTEMS AND METHODS 有权
晶体管结二极管电路及方法

  • 专利标题: TRANSISTOR JUNCTION DIODE CIRCUITRY SYSTEMS AND METHODS
  • 专利标题(中): 晶体管结二极管电路及方法
  • 申请号: US12490317
    申请日: 2009-06-24
  • 公开(公告)号: US20100277230A1
    公开(公告)日: 2010-11-04
  • 发明人: Wai Lim NGAI
  • 申请人: Wai Lim NGAI
  • 申请人地址: US CA San Diego
  • 专利权人: ENTROPIC COMMUNICATIONS INC.
  • 当前专利权人: ENTROPIC COMMUNICATIONS INC.
  • 当前专利权人地址: US CA San Diego
  • 主分类号: G05F3/02
  • IPC分类号: G05F3/02
TRANSISTOR JUNCTION DIODE CIRCUITRY SYSTEMS AND METHODS
摘要:
Methods and apparatus for capacitive voltage division are provided, an example apparatus having an input and an output and including a first switched capacitor circuit. In some embodiments, the capacitive voltage divider includes first and second MOSFETs. A first capacitor is coupled between the drain of the first MOSFET and the input to the capacitive voltage divider. A first circuit coupled to the drain of the first MOSFET is configured to pull down the drain of the first MOSFET and thus apply a reverse bias to a first junction diode internal to the first MOSFET between the drain and the bulk of the first MOSFET. A second capacitor is coupled between the source of the first MOSFET and the drain of the second MOSFET. A second circuit is configured to reverse bias a second junction diode between the drain and bulk of the second MOSFET.
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