公开(公告)号：US20100277230A1

公开(公告)日：2010-11-04

申请号：US12490317

申请日：2009-06-24

申请人： Wai Lim NGAI

发明人： Wai Lim NGAI

IPC分类号： G05F3/02

CPC分类号： H02M3/07 ,  G01R15/06 ,  H02M2003/072

摘要： Methods and apparatus for capacitive voltage division are provided, an example apparatus having an input and an output and including a first switched capacitor circuit. In some embodiments, the capacitive voltage divider includes first and second MOSFETs. A first capacitor is coupled between the drain of the first MOSFET and the input to the capacitive voltage divider. A first circuit coupled to the drain of the first MOSFET is configured to pull down the drain of the first MOSFET and thus apply a reverse bias to a first junction diode internal to the first MOSFET between the drain and the bulk of the first MOSFET. A second capacitor is coupled between the source of the first MOSFET and the drain of the second MOSFET. A second circuit is configured to reverse bias a second junction diode between the drain and bulk of the second MOSFET.

摘要翻译： 提供了用于电容分压的方法和装置，具有输入和输出并且包括第一开关电容器电路的示例装置。 在一些实施例中，电容分压器包括第一和第二MOSFET。 第一电容器耦合在第一MOSFET的漏极和电容分压器的输入端之间。 耦合到第一MOSFET的漏极的第一电路被配置为下拉第一MOSFET的漏极，并且因此将第一MOSFET的内部的第一结二极管施加到漏极和第一MOSFET的主体之间的反向偏置。 第二电容器耦合在第一MOSFET的源极和第二MOSFET的漏极之间。 第二电路被配置为在第二MOSFET的漏极和体积之间反向偏置第二结二极管。

公开(公告)号：US20110204966A1

公开(公告)日：2011-08-25

申请号：US13098739

申请日：2011-05-02

申请人： Wai Lim NGAI

发明人： Wai Lim NGAI

IPC分类号： G05F3/02

CPC分类号： H02M3/07 ,  G01R15/06 ,  H02M2003/072

摘要： Methods and apparatus for capacitive voltage division are provided, an example apparatus having an input and an output and including a first switched capacitor circuit. In some embodiments, the capacitive voltage divider includes first and second MOSFETs. A first capacitor is coupled between the drain of the first MOSFET and the input to the capacitive voltage divider. A first circuit coupled to the drain of the first MOSFET is configured to pull down the drain of the first MOSFET and thus apply a reverse bias to a first junction diode internal to the first MOSFET between the drain and the bulk of the first MOSFET. A second capacitor is coupled between the source of the first MOSFET and the drain of the second MOSFET. A second circuit is configured to reverse bias a second junction diode between the drain and bulk of the second MOSFET.

公开(公告)号：US20120013404A1

公开(公告)日：2012-01-19

申请号：US13171257

申请日：2011-06-28

申请人： Wai Lim NGAI

发明人： Wai Lim NGAI

IPC分类号： H03F3/45

CPC分类号： H03F3/45183 ,  H03F1/26 ,  H03F1/3205 ,  H03F1/3211 ,  H03F1/3247 ,  H03F1/56 ,  H03F3/195 ,  H03F3/245 ,  H03F2200/222 ,  H03F2200/36 ,  H03F2203/45366 ,  H03F2203/45481 ,  H03F2203/45638 ,  H03F2203/45644 ,  H03F2203/45701 ,  H03F2203/45702

摘要： A CMOS differential power amplifier having broadband input matching with Noise and Non-linearity Cancellation. The broadband input match is realized by using two “Diode-Connected” NFETs (i.e., N-type Field Effect Transistors). Resulting noise degradation is reduced by using a noise cancellation structure. By using the same structure the disclosed method and apparatus also achieves non-linearity cancellation.

摘要翻译： 具有与噪声和非线性消除匹配的宽带输入的CMOS差分功率放大器。 宽带输入匹配通过使用两个“二极管连接”NFET（即N型场效应晶体管）来实现。 通过使用噪声消除结构，降低了噪声降低。 通过使用相同的结构，所公开的方法和装置也实现非线性消除。