发明申请
- 专利标题: MEMORY CHANNEL WITH BIT LANE FAIL-OVER
- 专利标题(中): 存储通道与双向LANE失败
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申请号: US12836953申请日: 2010-07-15
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公开(公告)号: US20100281315A1公开(公告)日: 2010-11-04
- 发明人: Pete D. Vogt , Dennis W. Brzezinski , Warren R. Morrow
- 申请人: Pete D. Vogt , Dennis W. Brzezinski , Warren R. Morrow
- 主分类号: G11C29/52
- IPC分类号: G11C29/52 ; G06F11/20
摘要:
Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.
公开/授权文献
- US08020056B2 Memory channel with bit lane fail-over 公开/授权日:2011-09-13
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