发明申请
US20100281315A1 MEMORY CHANNEL WITH BIT LANE FAIL-OVER 有权
存储通道与双向LANE失败

MEMORY CHANNEL WITH BIT LANE FAIL-OVER
摘要:
Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.
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