发明申请
- 专利标题: INTERCONNECT STRUCTURES WITH PATTERNABLE LOW-K DIELECTRICS AND METHOD OF FABRICATING SAME
- 专利标题(中): 具有可编程低K电介质的互连结构及其制造方法
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申请号: US12841359申请日: 2010-07-22
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公开(公告)号: US20100283157A1公开(公告)日: 2010-11-11
- 发明人: Qinghuang Lin , Shyng-Tsong Chen
- 申请人: Qinghuang Lin , Shyng-Tsong Chen
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L23/522
- IPC分类号: H01L23/522 ; H01L21/768
摘要:
The present invention provides an interconnect structure in which a patternable low-k material is employed as an interconnect dielectric material. Specifically, this invention relates to single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric. In general terms, the interconnect structure includes at least one patterned and cured low-k dielectric material located on a surface of a substrate. The at least one cured and patterned low-k material has conductively filled regions embedded therein and typically, but not always, includes Si atoms bonded to cyclic rings via oxygen atoms. The present invention also provides a method of forming such interconnect structures in which no separate photoresist is employed in patterning the patterned low-k material.