发明申请
- 专利标题： DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME
- 专利标题（中）： 其显示装置及其制造方法
-
申请号： US12838115申请日： 2010-07-16
-
公开(公告)号： US20100285624A1公开(公告)日： 2010-11-11
- 发明人: Satoshi KOBAYASHI , Ikuko KAWAMATA , Koji DAIRIKI , Shigeki KOMORI , Toshiyuki ISA , Shunpei YAMAZAKI
- 申请人： Satoshi KOBAYASHI , Ikuko KAWAMATA , Koji DAIRIKI , Shigeki KOMORI , Toshiyuki ISA , Shunpei YAMAZAKI
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2007-227073 20070831
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film.
公开/授权文献
- US08133771B2 Display device and manufacturing method of the same 公开/授权日：2012-03-13
信息查询
IPC分类:
