发明申请
- 专利标题： DIFFUSED JUNCTION TERMINATION STRUCTURES FOR SILICON CARBIDE DEVICES AND METHODS OF FABRICATING SILICON CARBIDE DEVICES INCORPORATING SAME
- 专利标题（中）： 用于硅碳化物装置的扩散结点终止结构和合成其中的碳化硅器件的制造方法
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申请号： US12719497申请日： 2010-03-08
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公开(公告)号： US20100289032A1公开(公告)日： 2010-11-18
- 发明人: Qingchun Zhang , Anant K. Agarwal , Tangali S. Sudarshan , Alexander Bolotnikov
- 申请人： Qingchun Zhang , Anant K. Agarwal , Tangali S. Sudarshan , Alexander Bolotnikov
- 主分类号： H01L29/24
- IPC分类号： H01L29/24 ; H01L21/225
摘要：
An electronic device includes a silicon carbide layer having a first conductivity type and a main junction adjacent a surface of the silicon carbide layer, and a junction termination region at the surface of the silicon carbide layer adjacent the main junction. Charge in the junction termination region decreases with lateral distance from the main junction, and a maximum charge in the junction termination region may be less than about 2×1014 cm−2.