发明申请
US20100289143A1 METHOD FOR PRODUCING LOW-k FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME 有权
用于生产低k膜的方法,半导体器件及其制造方法

METHOD FOR PRODUCING LOW-k FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
摘要:
Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range.
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