发明申请
- 专利标题: METHOD FOR PRODUCING LOW-k FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 用于生产低k膜的方法,半导体器件及其制造方法
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申请号: US12617040申请日: 2009-11-12
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公开(公告)号: US20100289143A1公开(公告)日: 2010-11-18
- 发明人: Yoshinori Cho , Takamaro Kikkawa
- 申请人: Yoshinori Cho , Takamaro Kikkawa
- 申请人地址: JP Tokyo JP Higashihiroshima-shi
- 专利权人: Elpida Memory, Inc,Hiroshima University
- 当前专利权人: Elpida Memory, Inc,Hiroshima University
- 当前专利权人地址: JP Tokyo JP Higashihiroshima-shi
- 优先权: JP2009-116601 20090513
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L21/31 ; H01L21/768
摘要:
Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range.
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