公开(公告)号：US08253251B2

公开(公告)日：2012-08-28

申请号：US13222817

申请日：2011-08-31

申请人： Yoshinori Cho ,  Takamaro Kikkawa

发明人： Yoshinori Cho ,  Takamaro Kikkawa

IPC分类号： H01L23/48

CPC分类号： H01L23/5329 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/53228 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range.

摘要翻译： 通过在基板上涂布用于形成多孔二氧化硅膜的原料，进行气相输送处理，使基板暴露于不含有多孔二氧化硅膜的有机胺蒸气的气氛下，提高了包含多孔二氧化硅膜的低介电常数膜的疏水性 加水。 同时，通过将孔径控制在预定范围内来实现介电常数的降低，漏电流的降低和机械强度的提高。

公开(公告)号：US08030221B2

公开(公告)日：2011-10-04

申请号：US12617040

申请日：2009-11-12

申请人： Yoshinori Cho ,  Takamaro Kikkawa

发明人： Yoshinori Cho ,  Takamaro Kikkawa

IPC分类号： H01L21/00

CPC分类号： H01L23/5329 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/53228 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range.

摘要翻译： 通过在基板上涂布用于形成多孔二氧化硅膜的原料，进行气相输送处理，使基板暴露于不含有多孔二氧化硅膜的有机胺蒸气的气氛下，提高了包含多孔二氧化硅膜的低介电常数膜的疏水性 加水。 同时，通过将孔径控制在预定范围内来实现介电常数的降低，漏电流的降低和机械强度的提高。

公开(公告)号：US20110309511A1

公开(公告)日：2011-12-22

申请号：US13222817

申请日：2011-08-31

申请人： Yoshinori CHO ,  Takamaro Kikkawa

发明人： Yoshinori CHO ,  Takamaro Kikkawa

IPC分类号： H01L23/522 ,  H01L21/312

CPC分类号： H01L23/5329 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/53228 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range.

摘要翻译： 通过在基板上涂布用于形成多孔二氧化硅膜的原料，进行气相输送处理，使基板暴露于不含有多孔二氧化硅膜的有机胺蒸气的气氛下，提高了包含多孔二氧化硅膜的低介电常数膜的疏水性 加水。 同时，通过将孔径控制在预定范围内来实现介电常数的降低，漏电流的降低和机械强度的提高。

公开(公告)号：US20100289143A1

公开(公告)日：2010-11-18

申请号：US12617040

申请日：2009-11-12

申请人： Yoshinori Cho ,  Takamaro Kikkawa

发明人： Yoshinori Cho ,  Takamaro Kikkawa

IPC分类号： H01L23/48 ,  H01L21/31 ,  H01L21/768

CPC分类号： H01L23/5329 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/53228 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range.

摘要翻译： 通过在基板上涂布用于形成多孔二氧化硅膜的原料，进行气相输送处理，使基板暴露于不含有多孔二氧化硅膜的有机胺蒸气的气氛下，提高了包含多孔二氧化硅膜的低介电常数膜的疏水性 加水。 同时，通过将孔径控制在预定范围内来实现介电常数的降低，漏电流的降低和机械强度的提高。

公开(公告)号：US5345108A

公开(公告)日：1994-09-06

申请号：US840925

申请日：1992-02-25

申请人： Takamaro Kikkawa

发明人： Takamaro Kikkawa

IPC分类号： H01L23/532 ,  H01L23/48 ,  H01L29/46 ,  H01L29/54 ,  H01L29/62

CPC分类号： H01L23/53223 ,  H01L2924/0002 ,  Y10S257/915

摘要： A semiconductor device having an electrode wiring which prevents generation of hillock and has good stress migration capability is disclosed. A multi layer film including at least two Al-Si-Cu alloy films and at least two titanium nitride films formed by reactive sputtering laminated alternately with the Al-Si-Cu alloy films has a high mechanical strength against deformation and can effectively prevent generation of hillock. Ti-Al intermetallic compounds are formed in grain boundaries and in interfaces, which is effective to restrict generation of a void. Propagation of a void can be prevented by the intermediate titanium nitride film. Further, the formation of the Ti-Al compounds is restricted and an increase of resistance is negligible.

摘要翻译： 公开了一种具有防止产生小丘并具有良好的应力迁移能力的电极布线的半导体器件。 包括至少两个Al-Si-Cu合金膜和通过与Al-Si-Cu合金膜交替层叠的反应溅射形成的至少两个氮化钛膜的多层膜具有抗变形的高机械强度，并且可以有效地防止 岗。 在晶界和界面中形成Ti-Al金属间化合物，这有效地限制空隙的产生。 可以通过中间氮化钛膜来防止空隙的传播。 此外，Ti-Al化合物的形成受到限制，电阻的增加是可忽略的。

公开(公告)号：US4933305A

公开(公告)日：1990-06-12

申请号：US224603

申请日：1988-07-27

申请人： Takamaro Kikkawa

发明人： Takamaro Kikkawa

IPC分类号： H01L21/60 ,  H01L21/607 ,  H01L23/532

CPC分类号： H01L24/85 ,  H01L23/5329 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/85099 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L24/45 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/20102 ,  H01L2924/20753 ,  Y10T29/49144

摘要： For preventing a semiconductor device from separation of a passivation film, there is disclosed a process of wire bonding comprising the steps of: (a) preparing an intermediate structure of a semiconductor device; (b) forming an inter-level insulating layer of an organic material on the intermediate structure; (c) forming at least one bonding pad on the inter-level insulating layer; (d) growing a passivation film of an inorganic material on the inter-level insulating film in a high temperature ambient, the passivation film exposing the bonding pad; and (e) connecting a bonding wire to the bonding pad at a temperature lower than that of the high temperature ambient.

摘要翻译： 为了防止半导体器件分离钝化膜，公开了一种引线接合工艺，包括以下步骤：（a）制备半导体器件的中间结构; （b）在所述中间结构上形成有机材料的层间绝缘层; （c）在所述层间绝缘层上形成至少一个焊盘; （d）在高温环境下，在层间绝缘膜上生长无机材料的钝化膜，该钝化膜露出接合焊盘; 和（e）在低于高温环境温度的温度下将接合线连接到接合焊盘。

公开(公告)号：US4816895A

公开(公告)日：1989-03-28

申请号：US021924

申请日：1987-03-05

申请人： Takamaro Kikkawa

发明人： Takamaro Kikkawa

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L23/532 ,  H01L23/54

CPC分类号： H01L23/53271 ,  H01L23/53223 ,  H01L2924/0002

摘要： A semiconductor device including interconnection lines for connecting element regions is disclosed. Each of interconnection lines is comprised of a first layer consisting essentially of aluminum, an alumina film formed on the first layer and a second layer containing silicon and deposited on the alumina film. Refractory metal silicide such as tungsten silicide, molybdenum silicide, titanium silicide, tantalum silicide and chrominum silicide is favorably employed as the second layer. Hillock formation and electromigration are thus prevented or suppressed.

摘要翻译： 公开了一种包括用于连接元件区域的互连线的半导体器件。 每个互连线由基本上由铝组成的第一层，形成在第一层上的氧化铝膜和含有硅并沉积在氧化铝膜上的第二层组成。 作为第二层，有利地使用诸如硅化钨，硅化钼，硅化钛，硅化钽和硅化铬的耐火金属硅化物。 因此防止或抑制小丘形成和电迁移。

公开(公告)号：US20080106469A1

公开(公告)日：2008-05-08

申请号：US10553994

申请日：2004-03-29

申请人： Takamaro Kikkawa ,  Atsushi Iwata ,  Hideo Sunami ,  Hans Jurgen Mattausch ,  Shin Yokoyama ,  Kentaro Shibahara ,  Anri Nakajima ,  Tetsushi Koide ,  A.B.M. Harun-ur Rashid ,  Shinji Watanabe

发明人： Takamaro Kikkawa ,  Atsushi Iwata ,  Hideo Sunami ,  Hans Jurgen Mattausch ,  Shin Yokoyama ,  Kentaro Shibahara ,  Anri Nakajima ,  Tetsushi Koide ,  A.B.M. Harun-ur Rashid ,  Shinji Watanabe

IPC分类号： H01Q1/38 ,  H01Q9/04

CPC分类号： H01L23/642 ,  H01L23/48 ,  H01L23/5227 ,  H01L2924/0002 ,  H01Q1/38 ,  H01L2924/00

摘要： The present invention provides a semiconductor device in which, in order to prevent wiring delay, an electromagnetic wave is radiated from a transmitting dipole antenna placed on a semiconductor chip and received with a receiving antenna placed in a circuit block included in another semiconductor chip, instead of long metal wires or via-hole interconnection. In the semiconductor device, wireless interconnection is accomplished in such a manner that the electromagnetic wave radiated from the transmitting antenna (3) placed on the semiconductor substrate (1) is transmitted to the receiving antenna (4) placed on the semiconductor substrate (1) or receiving antennas placed on semiconductor substrates; the semiconductor substrates have broadband transmitting/receiving antennas; a signal is transmitted from one or more of the semiconductor substrates and received with the receiving antenna or antennas placed on the semiconductor substrate (1) or substrates, respectively; and the signal transmitted and received has an ultra-wide band communication function.

摘要翻译： 本发明提供了一种半导体器件，其中为了防止布线延迟，电磁波从放置在半导体芯片上的发射偶极子天线辐射并且被放置在包含在另一个半导体芯片中的电路块中的接收天线接收 长金属线或通孔互连。 在半导体装置中，以从放置在半导体基板（1）上的发射天线（3）辐射的电磁波传输到放置在半导体基板（1）上的接收天线（4）的方式实现无线互连， 或接收放置在半导体衬底上的天线; 半导体衬底具有宽带发射/接收天线; 从一个或多个半导体衬底发送信号并分别与放置在半导体衬底（1）或衬底上的接收天线或天线一起接收信号; 并且发送和接收的信号具有超宽带通信功能。