Provided is a method for cleaning a semiconductor device substrate, which is excellent in removability and re-adhesion-preventing properties of contaminations of fine particles or organic matter, metal contamination and combined contamination of organic matter and metal, which are adhered to a substrate surface, and which can highly clean the substrate surface without corroding it even when an intense ultrasonic wave is not applied.It is a method for cleaning a semiconductor device substrate, the method comprising cleaning the semiconductor device substrate while applying an ultrasonic wave having an intensity of 0.2 W or more and 1.5 W or less per cm2 of substrate to be irradiated with the ultrasonic wave by using a cleaning solution comprising the following components (A) to (D): (A) hydrogen peroxide, (B) an alkali, (C) water, and (D) a compound represented by the following general formula (1): R1—O—(—R2—O—)n—H(1) wherein R1 represents an alkyl group having 1 to 4 carbon atoms, R2 represents an alkylene group having 2 to 3 carbon atoms, and n represents an integer of 1 to 3.