发明申请
- 专利标题: Plasma Processing Apparatus
- 专利标题(中): 等离子体处理装置
-
申请号: US12850664申请日: 2010-08-05
-
公开(公告)号: US20100294432A1公开(公告)日: 2010-11-25
- 发明人: Manabu EDAMURA , Ken YOSHIOKA , Takeshi SHIMADA
- 申请人: Manabu EDAMURA , Ken YOSHIOKA , Takeshi SHIMADA
- 优先权: JP2005-030674 20050207
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
A plasma processing apparatus, a processing chamber having one surface formed by a flat-plate-like insulating-material manufactured window, a sample mounting electrode having a sample mounting plane formed on a surface opposed to the insulating-material manufactured window, a gas-inlet for a flat-plate-structured capacitively coupled antenna formed on an outer surface of the insulating-material manufactured window with slits provided in a radial pattern, an inductively coupled antenna formed outside OF the insulating-material manufactured window and performing an inductive coupling with a plasma via the window, the plasma being formed within the processing chamber, a radio-frequency power supply, and an LC circuit. The inductively coupled antenna is configured by a coil which is wound a plurality of times with a direction defined as a longitudinal direction, the direction extending perpendicular to the sample mounting plane.
信息查询
IPC分类: