发明申请
- 专利标题： Single Gate Inverter Nanowire Mesh
- 专利标题（中）： 单门逆变器纳米线网
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申请号： US12470128申请日： 2009-05-21
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公开(公告)号： US20100295021A1公开(公告)日： 2010-11-25
- 发明人: Josephine Chang , Paul Chang , Michael A. Guillorn , Jeffrey Sleight
- 申请人： Josephine Chang , Paul Chang , Michael A. Guillorn , Jeffrey Sleight
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L21/336 ; H01L27/12
摘要：
Nanowire-based devices are provided. In one aspect, a field-effect transistor (FET) inverter is provided. The FET inverter includes a plurality of device layers oriented vertically in a stack, each device layer having a source region, a drain region and a plurality of nanowire channels connecting the source region and the drain region, wherein the source and drain regions of one or more of the device layers are doped with an n-type dopant and the source and drain regions of one or more other of the device layers are doped with a p-type dopant; a gate common to each of the device layers surrounding the nanowire channels; a first contact to the source regions of the one or more device layers doped with an n-type dopant; a second contact to the source regions of the one or more device layers doped with a p-type dopant; and a third contact common to the drain regions of each of the device layers. Techniques for fabricating a FET inverter are also provided.
公开/授权文献
- US08084308B2 Single gate inverter nanowire mesh 公开/授权日：2011-12-27