发明申请
US20100295104A1 SEMICONDUCTOR STRUCTURES HAVING BOTH ELEMENTAL AND COMPOUND SEMICONDUCTOR DEVICES ON A COMMON SUBSTRATE
有权
具有普通基底上的两个元素和化合物半导体器件的半导体结构
- 专利标题： SEMICONDUCTOR STRUCTURES HAVING BOTH ELEMENTAL AND COMPOUND SEMICONDUCTOR DEVICES ON A COMMON SUBSTRATE
- 专利标题（中）： 具有普通基底上的两个元素和化合物半导体器件的半导体结构
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申请号： US12470633申请日： 2009-05-22
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公开(公告)号： US20100295104A1公开(公告)日： 2010-11-25
- 发明人: Valery S. Kaper , John P. Bettencourt , Jeffrey R. LaRoche , Kamal Tabatabaie
- 申请人： Valery S. Kaper , John P. Bettencourt , Jeffrey R. LaRoche , Kamal Tabatabaie
- 申请人地址： US MA Waltham
- 专利权人： Raytheon Company
- 当前专利权人： Raytheon Company
- 当前专利权人地址： US MA Waltham
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor structure comprising: a substrate; a seed layer supported by the substrate; an elemental semiconductor layer disposed over a first portion of the seed layer; and a compound semiconductor layer disposed on a second portion of the seed layer. The first portion of the seed layer is electrically insulated from the second portion of the seed layer. A first semiconductor device is formed in the elemental semiconductor layer. A second semiconductor device is formed in the compound semiconductor layer. The second semiconductor device includes: a first electrode in contact with a first region of the compound semiconductor layer; a second electrode in contact with a second region of the compound semiconductor layer; and a third electrode. The third electrode controls carriers passing in a third region of the compound semiconductor layer disposed between the first region and the second region. A fourth electrode is in electrical contact with the second portion of the seed layer.
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