发明申请
- 专利标题： LASER PROCESSING METHOD FOR SEMICONDUCTOR WAFER
- 专利标题（中）： 用于半导体波长的激光加工方法
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申请号： US12771749申请日： 2010-04-30
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公开(公告)号： US20100297830A1公开(公告)日： 2010-11-25
- 发明人: Hiroshi Morikazu , Noboru Takeda , Hirokazu Matsumoto
- 申请人： Hiroshi Morikazu , Noboru Takeda , Hirokazu Matsumoto
- 申请人地址： JP Tokyo
- 专利权人： DISCO CORPORATION
- 当前专利权人： DISCO CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-123434 20090521
- 主分类号： H01L21/268
- IPC分类号： H01L21/268
摘要：
A laser processing method for a semiconductor wafer including a groove forming step of applying a pulsed laser beam having an absorption wavelength to the semiconductor wafer along a division line formed on the semiconductor wafer to thereby form a laser processed groove along the division lines on the semiconductor wafer, wherein the pulse width of the pulsed laser beam to be applied in the groove forming step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm2.
公开/授权文献
- US08252667B2 Laser processing method for semiconductor wafer 公开/授权日：2012-08-28
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