发明申请
US20100297842A1 CONDUCTIVE BUMP STRUCTURE FOR SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
审中-公开
用于半导体器件的导电保护结构及其制造方法
- 专利标题： CONDUCTIVE BUMP STRUCTURE FOR SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- 专利标题（中）： 用于半导体器件的导电保护结构及其制造方法
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申请号： US12851971申请日： 2010-08-06
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公开(公告)号： US20100297842A1公开(公告)日： 2010-11-25
- 发明人: Chun Chi KE , Chien-Ping HUANG , Don-Son JIUNG , Yu-Po WANG
- 申请人： Chun Chi KE , Chien-Ping HUANG , Don-Son JIUNG , Yu-Po WANG
- 申请人地址： TW Taichung
- 专利权人： SILICONWARE PRECISION INDUSTRIES CO., LTD.
- 当前专利权人： SILICONWARE PRECISION INDUSTRIES CO., LTD.
- 当前专利权人地址： TW Taichung
- 优先权： TW094111456 20050412
- 主分类号： H01L21/60
- IPC分类号： H01L21/60
摘要：
A conductive bump structure for a semiconductor device and a method for fabricating the same are provided. A metal bump is formed on an under bump metallurgy (UBM) structure electrically connected to and formed on a connection pad of the semiconductor device, wherein the metal bump is sized smaller than the UBM structure. Subsequently, a solder bump is mounted on the UBM structure and encapsulates the metal bump, so as to increase the bonding area and simultaneously allow the solder bump to be sufficiently wetted on the UBM structure to enhance bonding stress of the solder bump.