公开(公告)号：US20100297842A1

公开(公告)日：2010-11-25

申请号：US12851971

申请日：2010-08-06

申请人： Chun Chi KE ,  Chien-Ping HUANG ,  Don-Son JIUNG ,  Yu-Po WANG

发明人： Chun Chi KE ,  Chien-Ping HUANG ,  Don-Son JIUNG ,  Yu-Po WANG

IPC分类号： H01L21/60

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2924/00013 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/13099

摘要： A conductive bump structure for a semiconductor device and a method for fabricating the same are provided. A metal bump is formed on an under bump metallurgy (UBM) structure electrically connected to and formed on a connection pad of the semiconductor device, wherein the metal bump is sized smaller than the UBM structure. Subsequently, a solder bump is mounted on the UBM structure and encapsulates the metal bump, so as to increase the bonding area and simultaneously allow the solder bump to be sufficiently wetted on the UBM structure to enhance bonding stress of the solder bump.

摘要翻译： 提供了一种用于半导体器件的导电凸块结构及其制造方法。 金属凸块形成在电连接到半导体器件的连接焊盘上并形成在半导体器件的连接焊盘上的凸块下冶金（UBM）结构上，其中金属凸块的尺寸小于UBM结构。 随后，在UBM结构上安装焊料凸点并封装金属凸块，以便增加接合面积，并同时允许焊料凸块在UBM结构上充分润湿以增强焊料凸块的粘结应力。