发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- 专利标题(中): 半导体器件及其制造方法
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申请号: US12846162申请日: 2010-07-29
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公开(公告)号: US20100301394A1公开(公告)日: 2010-12-02
- 发明人: Yosuke Shimamune , Akira Katakami , Akiyoshi Hatada , Masashi Shima , Naoyoshi Tamura
- 申请人: Yosuke Shimamune , Akira Katakami , Akiyoshi Hatada , Masashi Shima , Naoyoshi Tamura
- 申请人地址: JP Yokohama-shi
- 专利权人: FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人: FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人地址: JP Yokohama-shi
- 优先权: JP2004-380619 20041228
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
A semiconductor device includes a gate electrode formed on a silicon substrate via a gate insulation film in correspondence to a channel region, source and drain regions of a p-type diffusion region formed in the silicon substrate at respective outer sides of sidewall insulation films of the gate electrode, and a pair of SiGe mixed crystal regions formed in the silicon substrate at respective outer sides of the sidewall insulation films in epitaxial relationship to the silicon substrate, the SiGe mixed crystal regions being defined by respective sidewall surfaces facing with each other, wherein, in each of the SiGe mixed crystal regions, the sidewall surface is defined by a plurality of facets forming respective, mutually different angles with respect to a principal surface of the silicon substrate.
公开/授权文献
- US08466450B2 Semiconductor device and fabrication method thereof 公开/授权日:2013-06-18