发明申请
- 专利标题: SEMICONDUCTOR MEMORY APPARATUS
- 专利标题(中): 半导体存储器
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申请号: US12855244申请日: 2010-08-12
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公开(公告)号: US20100301911A1公开(公告)日: 2010-12-02
- 发明人: Hyun Woo LEE , Won Joo YUN
- 申请人: Hyun Woo LEE , Won Joo YUN
- 申请人地址: KR Gyeonggi-do
- 专利权人: HYNIX SEMICONDUCTOR INC.
- 当前专利权人: HYNIX SEMICONDUCTOR INC.
- 当前专利权人地址: KR Gyeonggi-do
- 优先权: KR10-2008-0110892 20081110
- 主分类号: H03L7/06
- IPC分类号: H03L7/06
摘要:
A semiconductor memory apparatus having a clock signal generation circuit and a data output circuit is presented. The apparatus includes a delay locked loop (DLL), a phase locked loop (PLL), a frequency discrimination unit, and a data output buffer. The DLL circuit is configured to negatively delay a clock signal to generate a DLL clock signal. The PLL circuit is configured to receive the DLL clock signal to generate a control voltage in response to a frequency of the DLL clock signal and to generate a PLL clock signal of a frequency corresponding to a level of the control voltage. The frequency discrimination unit is configured to discriminate a frequency of the DLL clock signal in accordance with the level of the control voltage to generate a frequency discrimination signal. The data output buffer is configured to receive the DLL clock signal or the PLL clock signal to buffer output data signals.
公开/授权文献
- US07888982B2 Semiconductor memory apparatus 公开/授权日:2011-02-15
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