发明申请
US20100301911A1 SEMICONDUCTOR MEMORY APPARATUS 有权
半导体存储器

SEMICONDUCTOR MEMORY APPARATUS
摘要:
A semiconductor memory apparatus having a clock signal generation circuit and a data output circuit is presented. The apparatus includes a delay locked loop (DLL), a phase locked loop (PLL), a frequency discrimination unit, and a data output buffer. The DLL circuit is configured to negatively delay a clock signal to generate a DLL clock signal. The PLL circuit is configured to receive the DLL clock signal to generate a control voltage in response to a frequency of the DLL clock signal and to generate a PLL clock signal of a frequency corresponding to a level of the control voltage. The frequency discrimination unit is configured to discriminate a frequency of the DLL clock signal in accordance with the level of the control voltage to generate a frequency discrimination signal. The data output buffer is configured to receive the DLL clock signal or the PLL clock signal to buffer output data signals.
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