发明申请
- 专利标题： Method of preventing coupling noises for a non-volatile semiconductor memory device
- 专利标题（中）： 防止非易失性半导体存储器件耦合噪声的方法
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申请号： US12662247申请日： 2010-04-07
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公开(公告)号： US20100302884A1公开(公告)日： 2010-12-02
- 发明人: Kwang-Jin Lee , Yong-Jun Lee , Du-Eung Kim , Woo-Yeong Cho , Joon-Yong Choi
- 申请人： Kwang-Jin Lee , Yong-Jun Lee , Du-Eung Kim , Woo-Yeong Cho , Joon-Yong Choi
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2009-0048353 20090602
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
Disclosed is a method of preventing coupling noises for a non-volatile semiconductor memory device. According to the method, if an edge of a write operation signal overlaps an activated period of a read operation signal a check result is generated. The write operation signal is modified based on the check result.
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