发明申请
US20100303680A1 CAPACITIVELY COUPLED PLASMA REACTOR HAVING VERY AGILE WAFER TEMPERATURE CONTROL
有权
具有非常平滑的温度控制的电容耦合等离子体反应器
- 专利标题: CAPACITIVELY COUPLED PLASMA REACTOR HAVING VERY AGILE WAFER TEMPERATURE CONTROL
- 专利标题(中): 具有非常平滑的温度控制的电容耦合等离子体反应器
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申请号: US12855678申请日: 2010-08-12
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公开(公告)号: US20100303680A1公开(公告)日: 2010-12-02
- 发明人: Douglas A. Buchberger, JR. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
- 申请人: Douglas A. Buchberger, JR. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
- 主分类号: B01J19/08
- IPC分类号: B01J19/08
摘要:
A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas. The reactor further includes an agile workpiece temperature control loop including (a) a temperature probe in the electrostatic chuck, and (b) a backside gas pressure controller coupled to an output of the temperature probe and responsive to a specified desired temperature, the controller governing the gas valve in response to a difference between the output of the temperature probe and the desired temperature.
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