发明申请
- 专利标题： SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS
- 专利标题（中）： 基板处理方法和基板处理装置
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申请号： US12846406申请日： 2010-07-29
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公开(公告)号： US20100307683A1公开(公告)日： 2010-12-09
- 发明人: Mitsuaki IWASHITA , Satoru Shimura , Keiji Tanouchi
- 申请人： Mitsuaki IWASHITA , Satoru Shimura , Keiji Tanouchi
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2004-139458 20040510
- 主分类号： H01L21/308
- IPC分类号： H01L21/308
摘要：
To improve the etch resistance of a resist pattern corresponding to an exposure light source with a short wavelength.After a resist film on a substrate is exposed to light and developed to form a resist pattern, a treatment step of supplying a fluorine-based liquid to the surface of the resist pattern is performed. Thereafter, an etching treatment of a base film using the resist pattern as a mask is performed. This increases the density of fluorine molecules on the surface of the resist pattern before the etching treatment to improve the etch resistance of the resist pattern.
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