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发明申请
US20100311895A1 LOW-K INTERLEVEL DIELECTRIC MATERIALS AND METHOD OF FORMING LOW-K INTERLEVEL DIELECTRIC LAYERS AND STRUCTURES 有权
低K电介质材料和低K电介质层和结构的形成方法

LOW-K INTERLEVEL DIELECTRIC MATERIALS AND METHOD OF FORMING LOW-K INTERLEVEL DIELECTRIC LAYERS AND STRUCTURES
摘要：
A composition of matter and a structure fabricated using the composition. The composition comprising: a resin; polymeric nano-particles dispersed in the resin, each of the polymeric nano-particle comprising a multi-arm core polymer and pendent polymers attached to the multi-arm core polymer, the multi-arm core polymer immiscible with the resin and the pendent polymers miscible with the resin; and a solvent, the solvent volatile at a first temperature, the resin cross-linkable at a second temperature, the polymeric nano-particle decomposable at a third temperature, the third temperature higher than the second temperature, the second temperature higher than the first temperature, wherein a thickness of a layer of the composition shrinks by less than about 3.5% between heating the layer from the second temperature to the third temperature.
摘要（中）：

使用该组合物制造的物质组成和结构。 所述组合物包含：树脂; 分散在树脂中的聚合物纳米颗粒，每个聚合纳米颗粒包含多臂芯聚合物和连接到多臂芯聚合物的悬置聚合物，与树脂不混溶的多臂芯聚合物和可混溶的侧链聚合物 与树脂; 和溶剂，所述溶剂在第一温度下挥发，所述树脂在第二温度下可交联，所述聚合物纳米颗粒在第三温度下可分解，所述第三温度高于所述第二温度，所述第二温度高于所述第一温度 ，其中在从第二温度到第三温度的层之间加热组合物的层的厚度收缩小于约3.5％。

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