发明申请
- 专利标题: MEMORY SYSTEM
- 专利标题(中): 记忆系统
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申请号: US12529126申请日: 2009-02-10
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公开(公告)号: US20100312948A1公开(公告)日: 2010-12-09
- 发明人: Junji Yano , Hidenori Matsuzaki , Kosuke Hatsuda
- 申请人: Junji Yano , Hidenori Matsuzaki , Kosuke Hatsuda
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2008-051481 20080301
- 国际申请: PCT/JP2009/052594 WO 20090210
- 主分类号: G06F12/02
- IPC分类号: G06F12/02 ; G06F12/00
摘要:
A memory system includes a DRAM 20 that performs writing and readout in a unit equal to or smaller than a cluster, a NAND memory 10 that performs writing and readout in a page unit, and a management table group in which management information including storage locations of data stored in the DRAM 20 and the NAND memory 10 is stored. When a readout request is received from the outside, a data managing unit 120 notifies, when an unwritten logical address area is present in a storage area of the NAND memory to which a logical address area requested to be read out is mapped, fixed data stored in the DRAM 20 to the outside in association with the logical address area.
公开/授权文献
- US08171208B2 Memory system 公开/授权日:2012-05-01
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