发明申请
- 专利标题： Nanotube Semiconductor Devices
- 专利标题（中）： 纳米管半导体器件
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申请号： US12484170申请日： 2009-06-12
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公开(公告)号： US20100314659A1公开(公告)日： 2010-12-16
- 发明人: Hamza Yilmaz , Xiaobin Wang , Anup Bhalla , John Chen , Hong Chang
- 申请人： Hamza Yilmaz , Xiaobin Wang , Anup Bhalla , John Chen , Hong Chang
- 申请人地址： US CA Sunnyvale
- 专利权人： ALPHA & OMEGA SEMICONDUCTOR, INC.
- 当前专利权人： ALPHA & OMEGA SEMICONDUCTOR, INC.
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L29/78
摘要：
A semiconductor device includes a first semiconductor layer and a second semiconductor layer of opposite conductivity type, a first epitaxial layer of the first conductivity type formed on sidewalls of the trenches, and a second epitaxial layer of the second conductivity type formed on the first epitaxial layer where the second epitaxial layer is electrically connected to the second semiconductor layer. The first epitaxial layer and the second epitaxial layer form parallel doped regions along the sidewalls of the trenches, each having uniform doping concentration. The second epitaxial layer has a first thickness and a first doping concentration and the first epitaxial layer and a mesa of the first semiconductor layer together having a second thickness and a second average doping concentration where the first and second thicknesses and the first doping concentration and second average doping concentrations are selected to achieve charge balance in operation.
公开/授权文献
- US08299494B2 Nanotube semiconductor devices 公开/授权日：2012-10-30
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