发明申请
- 专利标题： CMOS PIXEL WITH DUAL-ELEMENT TRANSFER GATE
- 专利标题（中）： 具有双元件转移门的CMOS像素
-
申请号： US12781638申请日： 2010-05-17
-
公开(公告)号： US20100314667A1公开(公告)日： 2010-12-16
- 发明人: Hidetoshi Nozaki , Tiejun Dai
- 申请人： Hidetoshi Nozaki , Tiejun Dai
- 申请人地址： US CA Santa Clara
- 专利权人： OMNIVISION TECHNOLOGIES, INC.
- 当前专利权人： OMNIVISION TECHNOLOGIES, INC.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L31/112
- IPC分类号： H01L31/112 ; H01L31/18
摘要：
Embodiments of a pixel that includes a photosensitive region, a floating diffusion region, and a transistor transfer gate disposed between the photosensitive region and the floating diffusion region. The transfer gate includes first and second transfer gate elements, the first transfer gate element having a different doping than the second transfer gate element. By controlling the doping of the first and second transfer gate elements a transfer gate can be provided with a greater threshold voltage near the photosensitive region and a lesser threshold voltage near the floating diffusion region. Other embodiments, including process embodiments, are disclosed and claimed.