发明申请
- 专利标题: Capacitor devices
- 专利标题(中): 电容器件
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申请号: US12805886申请日: 2010-08-23
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公开(公告)号: US20100321862A1公开(公告)日: 2010-12-23
- 发明人: Shih-Hsien Wu , Shinn-Juh Lai , Min-Lin Lee , Shur-Fen Liu
- 申请人: Shih-Hsien Wu , Shinn-Juh Lai , Min-Lin Lee , Shur-Fen Liu
- 专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 主分类号: H01G4/06
- IPC分类号: H01G4/06
摘要:
A capacitor device with a capacitance is introduced. The capacitor device includes at least one capacitive element. The at least capacitive element comprises a pair of first conductive layers being opposed to each other, at least one first dielectric layer formed on a surface of at least one of the first conductive layers, and a second dielectric layer being sandwiched between the first conductive layers. The first dielectric layer has a first dielectric constant and the second dielectric layer has a second dielectric constant. The capacitance of the capacitor device depends on dielectric parameters of the first dielectric layer and the second dielectric layer. The dielectric parameters comprise the first dielectric constant and thickness of the at least one first dielectric layer and the second dielectric constant and thickness of the second dielectric layer.
公开/授权文献
- US08035951B2 Capacitor devices 公开/授权日:2011-10-11
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