发明申请
- 专利标题： Method for Fabricating an Integrated Circuit Including Resistivity Changing Material Having a Planarized Surface
- 专利标题（中）： 包括具有平坦化表面的电阻率变化材料的集成电路的制造方法
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申请号： US12856007申请日： 2010-08-13
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公开(公告)号： US20100323493A1公开(公告)日： 2010-12-23
- 发明人: Jan Boris Philipp , Thomas Happ
- 申请人： Jan Boris Philipp , Thomas Happ
- 申请人地址： US NC Cary
- 专利权人： QIMONDA NORTH AMERICA CORP.
- 当前专利权人： QIMONDA NORTH AMERICA CORP.
- 当前专利权人地址： US NC Cary
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
An integrated circuit is fabricated by providing a preprocessed wafer including a first electrode, depositing a dielectric material over the preprocessed wafer, etching an opening in the dielectric material to expose a portion of the first electrode and depositing a first resistivity changing material over exposed portions of the etched dielectric material and the first electrode. The first resistivity changing material is planarized to expose the etched dielectric material. A second resistivity changing material is deposited over the etched dielectric material and the first resistivity changing material, and an electrode material is deposited over the second resistivity changing material.