发明申请
US20100327255A1 NANOFLUDIC FIELD EFFECT TRANSISTOR BASED ON SURFACE CHARGE MODULATED NANOCHANNEL
有权
基于表面电荷调制纳米通道的纳米场效应晶体管
- 专利标题: NANOFLUDIC FIELD EFFECT TRANSISTOR BASED ON SURFACE CHARGE MODULATED NANOCHANNEL
- 专利标题(中): 基于表面电荷调制纳米通道的纳米场效应晶体管
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申请号: US12493811申请日: 2009-06-29
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公开(公告)号: US20100327255A1公开(公告)日: 2010-12-30
- 发明人: Hongbo Peng , Stanislav Polonsky , Stephen Rossnagel , Gustavo Alejandro Stolovitzky
- 申请人: Hongbo Peng , Stanislav Polonsky , Stephen Rossnagel , Gustavo Alejandro Stolovitzky
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L51/10
- IPC分类号: H01L51/10 ; H01L51/40
摘要:
A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating layers. The gate has a surface charge polarity different from at least one of the insulating layers. A nanochannel runs through the membrane, connecting both parts of the reservoir. The device further includes: an ionic solution filling the reservoir and the nanochannel; a drain electrode; a source electrode; and voltages applied to the electrodes (a voltage between the source and drain electrodes and a voltage on the gate) for turning on an ionic current through the ionic channel wherein the voltage on the gate gates the transportation of ions through the ionic channel.
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