发明申请
- 专利标题： Single Electron Transistor Operating at Room Temperature and Manufacturing Method for Same
- 专利标题（中）： 单电子晶体管在室温下工作及其制造方法
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申请号： US12866886申请日： 2009-02-13
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公开(公告)号： US20100327260A1公开(公告)日： 2010-12-30
- 发明人: Jung Bum Choi , Seung Jun Shin
- 申请人： Jung Bum Choi , Seung Jun Shin
- 申请人地址： KR Cheongju-si, Chungcheongbuk-do
- 专利权人： Chungbuk National University Industry-Academic Cooperation Foundation
- 当前专利权人： Chungbuk National University Industry-Academic Cooperation Foundation
- 当前专利权人地址： KR Cheongju-si, Chungcheongbuk-do
- 优先权： KR10-2008-0014230 20080216; KR10-2008-0076550 20080805; KR10-2009-0010087 20090209
- 国际申请： PCT/KR2009/000707 WO 20090213
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/762
摘要：
The present invention relates to a single electron transistor operating at room temperature and a manufacturing method for same. More particularly, the present invention relates to a single electron transistor operating at room temperature, in which a quantum dot or a silicide quantum dot using a nanostructure is formed and a gate is positioned on the quantum dot so as to minimize influence on a tunneling barrier and achieve improved effectiveness in electric potential control for the quantum dot and operating efficiency of the transistor, and a manufacturing method for same.
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