公开(公告)号：US20080149829A1

公开(公告)日：2008-06-26

申请号：US11872614

申请日：2007-10-15

申请人： Hyeong Chan Jo ,  Hong Jae Lim ,  Seung Jun Shin ,  Joon Hui Kim ,  Yong Seok Kim ,  Sang-il Park

发明人： Hyeong Chan Jo ,  Hong Jae Lim ,  Seung Jun Shin ,  Joon Hui Kim ,  Yong Seok Kim ,  Sang-il Park

IPC分类号： H01J37/28

CPC分类号： G01Q70/02

摘要： Provided is a scanning probe microscope (SPM), a probe of which can be automatically replaced and the replacement probe can be attached onto an exact position. The SPM includes a first scanner that has a carrier holder, and changes a position of the carrier holder in a straight line; a second scanner changing a position of a sample on a plane; and a tray being able to store a spare carrier and a spare probe attached to the spare carrier. The carrier holder includes a plurality of protrusions.

摘要翻译： 提供了一种扫描探针显微镜（SPM），其探头可以自动更换，更换探头可以安装到精确位置。 SPM包括具有承载架的第一扫描器，并且将载体保持器的位置改变为直线; 第二扫描仪改变样品在平面上的位置; 以及托盘，其能够存储备用载体和附接到备用载体的备用探头。 承载架包括多个突起。

公开(公告)号：US08178369B2

公开(公告)日：2012-05-15

申请号：US12444956

申请日：2007-10-08

申请人： Jung Bum Choi ,  Jong Jin Lee ,  Seung-Jun Shin ,  Rae-Sik Chung

发明人： Jung Bum Choi ,  Jong Jin Lee ,  Seung-Jun Shin ,  Rae-Sik Chung

IPC分类号： H01L21/00

CPC分类号： H01L21/32139 ,  B82Y10/00 ,  H01L21/0277 ,  H01L29/127 ,  H01L29/66439 ,  H01L29/7613

摘要： The present invention relates to a method of fabricating a nanoscale multi-junction quantum dot device wherein it can minimize constraints depending on the number or shape of patterns and a line width, and in particular, overcome shortcomings depending on the proximity effect occurring between patterns while employing the advantages of electron beam lithography to the utmost by forming a new conductive layer between the patterns and utilizing it as a new pattern.

摘要翻译： 本发明涉及一种制造纳米级多结量子点器件的方法，其中它可以根据图案的数量或形状以及线宽来最小化约束，并且特别地，克服了取决于在图案之间发生的邻近效应的缺点，而 通过在图案之间形成新的导电层并将其用作新图案，最大限度地利用电子束光刻的优点。

公开(公告)号：US20100330751A1

公开(公告)日：2010-12-30

申请号：US12874146

申请日：2010-09-01

申请人： Jung Bum Choi ,  Seung Jun Shin

发明人： Jung Bum Choi ,  Seung Jun Shin

IPC分类号： H01L21/335

CPC分类号： H01L29/7613 ,  B82Y10/00 ,  H01L29/66439 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/937

摘要： The present invention relates to a single-electron transistor (SET) operating at room temperature and a method of manufacturing the same, and to be specific, to a single-electron transistor operating at room temperature and a method of manufacturing the same, which are capable of minimizing influence of the gate voltage on tunneling barriers and effectively controlling the electric potential of a quantum dot (QD), by forming the quantum dot using a trenched nano-wire structure and forming the gate to wrap most of the way around the quantum dot.

摘要翻译： 本发明涉及在室温下工作的单电子晶体管（SET）及其制造方法，具体涉及在室温下工作的单电子晶体管及其制造方法，其为 能够最小化栅极电压对隧道势垒的影响并有效地控制量子点（QD）的电位，通过使用沟槽纳米线结构形成量子点并形成栅极围绕量子包裹大部分 点。

公开(公告)号：US20100037360A1

公开(公告)日：2010-02-11

申请号：US12569680

申请日：2009-09-29

申请人： Hyeong Chan JO ,  Hong Jae Lim ,  Seung Jun Shin ,  Joon Hui Kim ,  Yong Seok Kim ,  Sang-il Park

发明人： Hyeong Chan JO ,  Hong Jae Lim ,  Seung Jun Shin ,  Joon Hui Kim ,  Yong Seok Kim ,  Sang-il Park

IPC分类号： G01Q70/02 ,  G01Q70/00

CPC分类号： G01Q70/02

摘要： An automatic probe exchange system for a scanning probe microscope (SPM) exchanges probes between a probe mount on the SPM and a probe mount on a probe tray based on differential magnetic force. When the magnetic force on the SPM side is greater, the probe is attached to the probe mount on the SPM. When the magnetic force on the probe tray side is greater, the probe is attached to the probe mount on the probe tray. The magnetic force on the probe tray side is varied by moving the magnets that generate the magnetic force on the probe tray side closer to or further from the probe.

摘要翻译： 用于扫描探针显微镜（SPM）的自动探针交换系统基于差分磁力在SPM上的探针安装座与探针托盘上的探针支架之间交换探头。 当SPM侧的磁力较大时，探头连接到SPM上的探头安装座上。 当探头托架侧的磁力较大时，探头将连接到探头托盘上的探头安装座上。 探头托盘侧的磁力通过移动产生磁力的磁铁在探头托盘一侧靠近或远离探头而变化。

公开(公告)号：US08099793B2

公开(公告)日：2012-01-17

申请号：US12569680

申请日：2009-09-29

申请人： Hyeong Chan Jo ,  Hong Jae Lim ,  Seung Jun Shin ,  Joon Hui Kim ,  Yong Seok Kim ,  Sang-il Park

发明人： Hyeong Chan Jo ,  Hong Jae Lim ,  Seung Jun Shin ,  Joon Hui Kim ,  Yong Seok Kim ,  Sang-il Park

IPC分类号： H01J37/00

CPC分类号： G01Q70/02

摘要： An automatic probe exchange system for a scanning probe microscope (SPM) exchanges probes between a probe mount on the SPM and a probe mount on a probe tray based on differential magnetic force. When the magnetic force on the SPM side is greater, the probe is attached to the probe mount on the SPM. When the magnetic force on the probe tray side is greater, the probe is attached to the probe mount on the probe tray. The magnetic force on the probe tray side is varied by moving the magnets that generate the magnetic force on the probe tray side closer to or further from the probe.

摘要翻译： 用于扫描探针显微镜（SPM）的自动探针交换系统基于差分磁力在SPM上的探针安装座与探针托盘上的探针支架之间交换探头。 当SPM侧的磁力较大时，探头连接到SPM上的探头安装座上。 当探头托架侧的磁力较大时，探头将连接到探头托盘上的探头安装座上。 探头托盘侧的磁力通过移动产生磁力的磁铁在探头托盘一侧靠近或远离探头而变化。

公开(公告)号：US08158538B2

公开(公告)日：2012-04-17

申请号：US12874146

申请日：2010-09-01

申请人： Jung Bum Choi ,  Seung Jun Shin

发明人： Jung Bum Choi ,  Seung Jun Shin

IPC分类号： H01L21/00 ,  H01L21/44 ,  H01L21/84

CPC分类号： H01L29/7613 ,  B82Y10/00 ,  H01L29/66439 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/937

摘要： The present invention relates to a single-electron transistor (SET) operating at room temperature and a method of manufacturing the same, and to be specific, to a single-electron transistor operating at room temperature and a method of manufacturing the same, which are capable of minimizing influence of the gate voltage on tunneling barriers and effectively controlling the electric potential of a quantum dot (QD), by forming the quantum dot using a trenched nano-wire structure and forming the gate to wrap most of the way around the quantum dot.

摘要翻译： 本发明涉及在室温下工作的单电子晶体管（SET）及其制造方法，具体涉及在室温下工作的单电子晶体管及其制造方法，它们是 能够最小化栅极电压对隧道势垒的影响并有效地控制量子点（QD）的电位，通过使用沟槽纳米线结构形成量子点并形成栅极围绕量子包裹大部分 点。

公开(公告)号：US08041445B2

公开(公告)日：2011-10-18

申请号：US12160089

申请日：2006-01-31

申请人： Suk-hwan Suh ,  Seung-jun Shin

发明人： Suk-hwan Suh ,  Seung-jun Shin

IPC分类号： G05B19/18 ,  G05B19/4093

CPC分类号： G05B19/40931 ,  G05B2219/35054 ,  G05B2219/35216 ,  Y02P90/265

摘要： A method of transforming a G-code type part program into a STEP-NC language type part program is provided and more particularly, a method is provided for enabling a G-code type part program mainly used in the field to be easily applied to a STEP-NC controller without a troublesome correction. A STEP-NC language type part program is automatically created, which is composed of machining operation information, manufacturing feature information, machining strategy information and the like, through a process of analyzing G-codes from the G-code type part program and tool information. A method of transforming a G-code into a STEP-NC part program includes receiving a G-code part program, tools and a numerical controller; creating G-code block information, and partitioning the entire part program on a workingstep basis. The method further includes creating machining strategy information and creating the STEP-NC part program by arranging the machining workingsteps.

摘要翻译： 提供了将G代码型零件程序变换为STEP-NC语言类型零件程序的方法，更具体地说，提供了一种使主要在该领域中使用的G代码型零件程序能够容易地应用于 STEP-NC控制器无需麻烦的校正。 通过从G代码型零件程序和工具信息分析G代码的处理，自动创建由加工操作信息，制造特征信息，加工策略信息等组成的STEP-NC语言类型零件程序 。 将G代码变换为STEP-NC零件程序的方法包括接收G代码部件程序，工具和数字控制器; 创建G代码块信息，并在工作阶段对整个零件程序进行分区。 该方法还包括通过布置加工工作步骤创建加工策略信息和创建STEP-NC零件程序。

公开(公告)号：US20100327260A1

公开(公告)日：2010-12-30

申请号：US12866886

申请日：2009-02-13

申请人： Jung Bum Choi ,  Seung Jun Shin

发明人： Jung Bum Choi ,  Seung Jun Shin

IPC分类号： H01L29/12 ,  H01L21/762

CPC分类号： H01L29/7613 ,  B82Y10/00 ,  H01L29/66439

摘要： The present invention relates to a single electron transistor operating at room temperature and a manufacturing method for same. More particularly, the present invention relates to a single electron transistor operating at room temperature, in which a quantum dot or a silicide quantum dot using a nanostructure is formed and a gate is positioned on the quantum dot so as to minimize influence on a tunneling barrier and achieve improved effectiveness in electric potential control for the quantum dot and operating efficiency of the transistor, and a manufacturing method for same.

摘要翻译： 本发明涉及在室温下工作的单电子晶体管及其制造方法。 更具体地，本发明涉及在室温下工作的单电子晶体管，其中形成使用纳米结构的量子点或硅化物量子点，并且栅极位于量子点上，以便最小化对隧道势垒的影响 并且实现了用于量子点的电位控制和晶体管的操作效率的改善的效果及其制造方法。

公开(公告)号：US07709791B2

公开(公告)日：2010-05-04

申请号：US11872614

申请日：2007-10-15

申请人： Hyeong Chan Jo ,  Hong Jae Lim ,  Seung Jun Shin ,  Joon Hui Kim ,  Yong Seok Kim ,  Sang-il Park

发明人： Hyeong Chan Jo ,  Hong Jae Lim ,  Seung Jun Shin ,  Joon Hui Kim ,  Yong Seok Kim ,  Sang-il Park

IPC分类号： G01N23/00 ,  G21K7/00

CPC分类号： G01Q70/02

摘要： Provided is a scanning probe microscope (SPM), a probe of which can be automatically replaced and the replacement probe can be attached onto an exact position. The SPM includes a first scanner that has a carrier holder, and changes a position of the carrier holder in a straight line; a second scanner changing a position of a sample on a plane; and a tray being able to store a spare carrier and a spare probe attached to the spare carrier. The carrier holder includes a plurality of protrusions.

摘要翻译： 提供了一种扫描探针显微镜（SPM），其探头可以自动更换，更换探头可以安装到精确位置。 SPM包括具有承载架的第一扫描器，并且将载体保持器的位置改变为直线; 第二扫描仪改变样品在平面上的位置; 以及托盘，其能够存储备用载体和附接到备用载体的备用探头。 承载架包括多个突起。

公开(公告)号：US20100006821A1

公开(公告)日：2010-01-14

申请号：US12444956

申请日：2007-10-08

申请人： Jung Bum Choi ,  Jong JIn Lee ,  Seung-Jun Shin ,  Rae-Sik Chung

发明人： Jung Bum Choi ,  Jong JIn Lee ,  Seung-Jun Shin ,  Rae-Sik Chung

IPC分类号： H01L29/66 ,  H01L21/336

CPC分类号： H01L21/32139 ,  B82Y10/00 ,  H01L21/0277 ,  H01L29/127 ,  H01L29/66439 ,  H01L29/7613

摘要： The present invention relates to a method of fabricating a nanoscale multi-junction quantum dot device wherein it can minimize constraints depending on the number or shape of patterns and a line width, and in particular, overcome shortcomings depending on the proximity effect occurring between patterns while employing the advantages of electron beam lithography to the utmost by forming a new conductive layer between the patterns and utilizing it as a new pattern.

摘要翻译： 本发明涉及一种制造纳米级多结量子点器件的方法，其中它可以根据图案的数量或形状以及线宽来最小化约束，并且特别地，克服了取决于在图案之间发生的邻近效应的缺点，而 通过在图案之间形成新的导电层并将其用作新图案，最大限度地利用电子束光刻的优点。