发明申请
US20100327322A1 Transistor with Enhanced Channel Charge Inducing Material Layer and Threshold Voltage Control
有权
具有增强的沟道电荷感应材料层和阈值电压控制的晶体管
- 专利标题： Transistor with Enhanced Channel Charge Inducing Material Layer and Threshold Voltage Control
- 专利标题（中）： 具有增强的沟道电荷感应材料层和阈值电压控制的晶体管
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申请号： US12823210申请日： 2010-06-25
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公开(公告)号： US20100327322A1公开(公告)日： 2010-12-30
- 发明人: Francis J. Kub , Karl D. Hobart , Charles R. Eddy, JR. , Michael A. Mastro , Travis Anderson
- 申请人： Francis J. Kub , Karl D. Hobart , Charles R. Eddy, JR. , Michael A. Mastro , Travis Anderson
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/335
摘要：
High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.
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