-
1.发明申请TRANSISTOR WITH ENHANCED CHANNEL CHARGE INDUCING MATERIAL LAYER AND THRESHOLD VOLTAGE CONTROL 有权具有增强的通道充电感应材料层和阈值电压控制的晶体管公开(公告)号：US20140141580A1
公开(公告)日：2014-05-22
申请号：US14165602
申请日：2014-01-28
IPC分类号： H01L29/66
CPC分类号： H01L29/778 , H01L29/0847 , H01L29/0891 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/42316 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/66431 , H01L29/66462 , H01L29/7783 , H01L29/7786
摘要： High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.
摘要翻译： 提出了高电子迁移率晶体管和制造工艺，其中提供均匀厚度的阻挡材料层用于在栅极区域中去除ECCIML层的源极和漏极区域内的增强沟道电荷诱导材料层（ECCIML）下的阈值电压控制。
-
2.发明申请TRANSISTOR WITH ENHANCED CHANNEL CHARGE INDUCING MATERIAL LAYER AND THRESHOLD VOLTAGE CONTROL 有权具有增强的通道充电感应材料层和阈值电压控制的晶体管公开(公告)号：US20130161641A1
公开(公告)日：2013-06-27
申请号：US13775309
申请日：2013-02-25
IPC分类号： H01L29/778 , H01L29/66
CPC分类号： H01L29/778 , H01L29/0847 , H01L29/0891 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/42316 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/66431 , H01L29/66462 , H01L29/7783 , H01L29/7786
摘要： High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.
摘要翻译： 提出了高电子迁移率晶体管和制造工艺，其中提供均匀厚度的阻挡材料层用于在栅极区域中去除ECCIML层的源极和漏极区域内的增强沟道电荷诱导材料层（ECCIML）下的阈值电压控制。
-
3.发明授权公开(公告)号：US08900939B2
公开(公告)日：2014-12-02
申请号：US14165602
申请日：2014-01-28
IPC分类号： H01L21/335 , H01L29/66 , H01L29/778 , H01L29/08 , H01L29/205 , H01L29/423 , H01L29/20 , H01L29/40
CPC分类号： H01L29/778 , H01L29/0847 , H01L29/0891 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/42316 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/66431 , H01L29/66462 , H01L29/7783 , H01L29/7786
摘要： High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.
-
4.发明授权Transistor with enhanced channel charge inducing material layer and threshold voltage control 有权具有增强的通道电荷诱导材料层和阈值电压控制的晶体管公开(公告)号：US08648390B2
公开(公告)日：2014-02-11
申请号：US13775309
申请日：2013-02-25
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/778 , H01L29/0847 , H01L29/0891 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/42316 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/66431 , H01L29/66462 , H01L29/7783 , H01L29/7786
摘要： High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.
摘要翻译： 提出了高电子迁移率晶体管和制造工艺，其中提供均匀厚度的阻挡材料层用于在栅极区域中去除ECCIML层的源极和漏极区域内的增强沟道电荷诱导材料层（ECCIML）下的阈值电压控制。
-
5.发明授权Transistor with enhanced channel charge inducing material layer and threshold voltage control 有权具有增强的通道电荷诱导材料层和阈值电压控制的晶体管公开(公告)号：US08384129B2
公开(公告)日：2013-02-26
申请号：US12823210
申请日：2010-06-25
IPC分类号： H01L29/778
CPC分类号： H01L29/778 , H01L29/0847 , H01L29/0891 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/42316 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/66431 , H01L29/66462 , H01L29/7783 , H01L29/7786
摘要： High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.
摘要翻译： 提出了高电子迁移率晶体管和制造工艺，其中提供均匀厚度的阻挡材料层用于在栅极区域中去除ECCIML层的源极和漏极区域内的增强沟道电荷诱导材料层（ECCIML）下的阈值电压控制。
-
6.发明申请Transistor with Enhanced Channel Charge Inducing Material Layer and Threshold Voltage Control 有权具有增强的沟道电荷感应材料层和阈值电压控制的晶体管公开(公告)号：US20100327322A1
公开(公告)日：2010-12-30
申请号：US12823210
申请日：2010-06-25
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/778 , H01L29/0847 , H01L29/0891 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/42316 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/66431 , H01L29/66462 , H01L29/7783 , H01L29/7786
摘要： High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.
摘要翻译： 提出了高电子迁移率晶体管和制造工艺，其中提供均匀厚度的阻挡材料层用于在栅极区域中去除ECCIML层的源极和漏极区域内的增强沟道电荷诱导材料层（ECCIML）下的阈值电压控制。
-
公开(公告)号：US10266963B2
公开(公告)日：2019-04-23
申请号：US14168517
申请日：2014-01-30
申请人： Neeraj Nepal , Virginia D. Wheeler , Charles R. Eddy, Jr. , Francis J. Kub , Travis J. Anderson , Michael A. Mastro , Rachael L. Myers-Ward , Sandra C. Hangarter
发明人： Neeraj Nepal , Virginia D. Wheeler , Charles R. Eddy, Jr. , Francis J. Kub , Travis J. Anderson , Michael A. Mastro , Rachael L. Myers-Ward , Sandra C. Hangarter
摘要： A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.
-
8.发明申请Complementary Field Effect Transistors Using Gallium Polar and Nitrogen Polar III-Nitride Material 有权互补场效应晶体管使用镓极极和氮极三氮化物材料公开(公告)号：US20140264380A1
公开(公告)日：2014-09-18
申请号：US14170161
申请日：2014-01-31
申请人： Francis J. Kub , Travis J. Anderson , Michael A. Mastro , Charles R. Eddy, JR. , Jennifer K. Hite
发明人： Francis J. Kub , Travis J. Anderson , Michael A. Mastro , Charles R. Eddy, JR. , Jennifer K. Hite
CPC分类号： H01L27/095 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02631 , H01L21/26546 , H01L21/28575 , H01L21/28587 , H01L21/30612 , H01L21/3065 , H01L21/762 , H01L21/8228 , H01L21/8238 , H01L21/8252 , H01L27/092 , H01L27/0921 , H01L27/0922 , H01L29/045 , H01L29/1075 , H01L29/1608 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/207 , H01L29/365 , H01L29/407 , H01L29/41725 , H01L29/41766 , H01L29/42364 , H01L29/452 , H01L29/51 , H01L29/66431 , H01L29/66439 , H01L29/66462 , H01L29/66477 , H01L29/778 , H01L29/7781 , H01L29/7782 , H01L29/7783 , H01L29/7784 , H01L29/7786 , H01L29/7787 , H01L29/78 , H01L29/7831
摘要： A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional hole gas. A method of making complementary non-inverted P-channel and non-inverted N-channel III-Nitride FET comprising growing epitaxial layers, depositing oxide, defining opening, growing epitaxially a first nitrogen-polar III-Nitride material, buffer, back barrier, channel, spacer, barrier, and cap layer, and carrier enhancement layer, depositing oxide, growing AlN nucleation layer/polarity inversion layer, growing gallium-polar III-Nitride, including epitaxial layers, depositing dielectric, fabricating P-channel III-Nitride FET, and fabricating N-channel III-Nitride FET.
摘要翻译： 具有N沟道和P沟道III氮化物场效应晶体管的器件包括在第一氮极氮氮III氮化物材料上的非反相P沟道III-氮化物场效应晶体管，非反相N沟道 III-氮化物场效应晶体管，外延生长，第一III-氮化物阻挡层，二维空穴气体，第二III-氮化物阻挡层和二维空穴气体。 制造互补的非反相P沟道和非反相N沟道III氮化物FET的方法，其包括生长外延层，沉积氧化物，限定开口，外延生长第一氮极III-氮化物材料，缓冲层，背部阻挡层， 通道，间隔物，阻挡层和覆盖层，载流子增强层，沉积氧化物，生长AlN成核层/极性反转层，生长中的镓极性III-氮化物，包括外延层，沉积电介质，制造P沟道III-氮化物FET ，并制造N沟道III型氮化物FET。
-
公开(公告)号：US20140255705A1
公开(公告)日：2014-09-11
申请号：US14168517
申请日：2014-01-30
申请人： Neeraj Nepal , Virginia D. Wheeler , Charles R. Eddy, JR. , Francis J. Kub , Travis J. Anderson , Michael A. Mastro , Rachael L. Myers-Ward , Sandra C. Hangarter
发明人： Neeraj Nepal , Virginia D. Wheeler , Charles R. Eddy, JR. , Francis J. Kub , Travis J. Anderson , Michael A. Mastro , Rachael L. Myers-Ward , Sandra C. Hangarter
CPC分类号： C30B25/186 , C30B25/183 , C30B29/40 , C30B29/406 , C30B29/48
摘要： A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.
摘要翻译： 在二维惰性材料上生长结晶材料的方法，包括使二维惰性材料的表面官能化，在功能化表面上生长成核层，以及生长结晶材料。 在由包括官能化二维惰性材料的表面，在功能化表面上生长成核层并且生长结晶材料的方法制备的二维惰性材料上生长的结晶材料。
-
10.发明授权Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material 有权使用镓极性和氮极性III族氮化物材料的互补场效应晶体管公开(公告)号：US09111786B1
公开(公告)日：2015-08-18
申请号：US14578146
申请日：2014-12-19
申请人： Francis J. Kub , Travis J. Anderson , Michael A. Mastro , Charles R. Eddy, Jr. , Jennifer K. Hite
发明人： Francis J. Kub , Travis J. Anderson , Michael A. Mastro , Charles R. Eddy, Jr. , Jennifer K. Hite
IPC分类号： H01L29/778 , H01L27/092 , H01L27/095 , H01L29/20 , H01L29/201 , H01L29/205 , H01L29/04 , H01L29/36 , H01L29/78 , H01L29/66 , H01L21/335 , H01L21/8228 , H01L21/8238
CPC分类号： H01L27/095 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02631 , H01L21/26546 , H01L21/28575 , H01L21/28587 , H01L21/30612 , H01L21/3065 , H01L21/762 , H01L21/8228 , H01L21/8238 , H01L21/8252 , H01L27/092 , H01L27/0921 , H01L27/0922 , H01L29/045 , H01L29/1075 , H01L29/1608 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/207 , H01L29/365 , H01L29/407 , H01L29/41725 , H01L29/41766 , H01L29/42364 , H01L29/452 , H01L29/51 , H01L29/66431 , H01L29/66439 , H01L29/66462 , H01L29/66477 , H01L29/778 , H01L29/7781 , H01L29/7782 , H01L29/7783 , H01L29/7784 , H01L29/7786 , H01L29/7787 , H01L29/78 , H01L29/7831
摘要： A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional hole gas. A method of making complementary non-inverted P-channel and non-inverted N-channel III-Nitride FET comprising growing epitaxial layers, depositing oxide, defining opening, growing epitaxially a first nitrogen-polar III-Nitride material, buffer, back barrier, channel, spacer, barrier, and cap layer, and carrier enhancement layer, depositing oxide, growing AlN nucleation layer/polarity inversion layer, growing gallium-polar III-Nitride, including epitaxial layers, depositing dielectric, fabricating P-channel III-Nitride FET, and fabricating N-channel III-Nitride FET.
摘要翻译： 具有N沟道和P沟道III氮化物场效应晶体管的器件包括在第一氮极氮氮III氮化物材料上的非反相P沟道III-氮化物场效应晶体管，非反相N沟道 III-氮化物场效应晶体管，外延生长，第一III-氮化物阻挡层，二维空穴气体，第二III-氮化物阻挡层和二维空穴气体。 制造互补的非反相P沟道和非反相N沟道III氮化物FET的方法，其包括生长外延层，沉积氧化物，限定开口，外延生长第一氮极III-氮化物材料，缓冲层，背部阻挡层， 通道，间隔物，阻挡层和覆盖层，载流子增强层，沉积氧化物，生长AlN成核层/极性反转层，生长中的镓极性III-氮化物，包括外延层，沉积电介质，制造P沟道III-氮化物FET ，并制造N沟道III型氮化物FET。
-
-
-
-
-
-
-
-
-
搜索结果
112 条记录 (耗时 0.031 秒)
