发明申请
US20100328996A1 PHASE CHANGE MEMORY HAVING ONE OR MORE NON-CONSTANT DOPING PROFILES
有权
具有一个或多个不间断的配置文件的相位更改记忆
- 专利标题: PHASE CHANGE MEMORY HAVING ONE OR MORE NON-CONSTANT DOPING PROFILES
- 专利标题(中): 具有一个或多个不间断的配置文件的相位更改记忆
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申请号: US12729837申请日: 2010-03-23
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公开(公告)号: US20100328996A1公开(公告)日: 2010-12-30
- 发明人: YEN-HAO SHIH , Huai-Yu Cheng , Chieh-Fang Chen , Chao-I Wu , Ming-Hsiu Lee , Hsiang-Lan Lung , Matthew J. Breitwisch , Simone Raoux , Chung Hon Lam
- 申请人: YEN-HAO SHIH , Huai-Yu Cheng , Chieh-Fang Chen , Chao-I Wu , Ming-Hsiu Lee , Hsiang-Lan Lung , Matthew J. Breitwisch , Simone Raoux , Chung Hon Lam
- 申请人地址: TW Hsinchu US NY Armonk
- 专利权人: Macronix International Co., Ltd.,International Business Machines Corporation
- 当前专利权人: Macronix International Co., Ltd.,International Business Machines Corporation
- 当前专利权人地址: TW Hsinchu US NY Armonk
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; H01L45/00
摘要:
A phase change memory device with a memory element including a basis phase change material, such as a chalcogenide, and one or more additives, where the additive or additives have a non-constant concentration profile along an inter-electrode current path through a memory element. The use of “non-constant” concentration profiles for additives enables doping the different zones with different materials and concentrations, according to the different crystallographic, thermal and electrical conditions, and different phase transition conditions.