发明申请
US20100330744A1 ULTRATHIN SEMICONDUCTOR CIRCUIT HAVING CONTACT BUMPS AND CORRESPONDING PRODUCTION METHOD
有权
具有接触焊料的超薄半导体电路和相应的生产方法
- 专利标题： ULTRATHIN SEMICONDUCTOR CIRCUIT HAVING CONTACT BUMPS AND CORRESPONDING PRODUCTION METHOD
- 专利标题（中）： 具有接触焊料的超薄半导体电路和相应的生产方法
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申请号： US12877577申请日： 2010-09-08
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公开(公告)号： US20100330744A1公开(公告)日： 2010-12-30
- 发明人: Dirk Muller , Manfred Schneegans , Sokratis Sgouridis
- 申请人： Dirk Muller , Manfred Schneegans , Sokratis Sgouridis
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 优先权： DE10355508.0 20031127
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/78 ; H01L21/50
摘要：
The invention relates to an ultrathin semiconductor circuit having contact bumps and to a corresponding production method. The semiconductor circuit includes a bump supporting layer having a supporting layer thickness and having a supporting layer opening for uncovering a contact layer element being formed on the surface of a semiconductor circuit. An electrode layer is situated on the surface of the contact layer element within the opening of the bump supporting layer, on which electrode layer is formed a bump metallization for realizing the contact bump. On account of the bump supporting layer, a thickness of the semiconductor circuit can be thinned to well below 300 micrometers, with the wafer reliably being prevented from breaking. Furthermore, the moisture barrier properties of the semiconductor circuit are thereby improved.
公开/授权文献
- US08735277B2 Methods for producing an ultrathin semiconductor circuit 公开/授权日：2014-05-27
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