发明申请
- 专利标题： METHOD FOR REMOVING THRESHOLD VOLTAGE ADJUSTING LAYER WITH EXTERNAL ACID DIFFUSION PROCESS
- 专利标题（中）： 用外部酸性扩散过程去除阈值电压调节层的方法
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申请号： US12490353申请日： 2009-06-24
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公开(公告)号： US20100330810A1公开(公告)日： 2010-12-30
- 发明人: Kuang-Jung Chen , Ricardo A. Donaton , Wu-Song Huang , Wai-Kin Li
- 申请人： Kuang-Jung Chen , Ricardo A. Donaton , Wu-Song Huang , Wai-Kin Li
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
The present invention provides a method of forming a threshold voltage adjusted gate stack in which an external acid diffusion process is employed for selectively removing a portion of a threshold voltage adjusting layer from one device region of a semiconductor substrate. The external acid diffusion process utilizes an acid polymer which when baked exhibits an increase in acid concentration which can diffuse into an underlying exposed portion of a threshold voltage adjusting layer. The diffused acid reacts with the exposed portion of the threshold voltage adjusting layer providing an acid reacted layer that can be selectively removed as compared to a laterally adjacent portion of the threshold voltage adjusting layer that is not exposed to the diffused acid.
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