发明申请
- 专利标题： PRESSURE SENSOR AND PRESSURE SENSOR MANUFACTURING METHOD
- 专利标题（中）： 压力传感器和压力传感器制造方法
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申请号： US12830787申请日： 2010-07-06
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公开(公告)号： US20110001199A1公开(公告)日： 2011-01-06
- 发明人: Hirofumi Tojo , Masayuki Yoneda
- 申请人： Hirofumi Tojo , Masayuki Yoneda
- 申请人地址： JP Tokyo
- 专利权人： YAMATAKE CORPORATION
- 当前专利权人： YAMATAKE CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-159762 20090706
- 主分类号： H01L29/84
- IPC分类号： H01L29/84 ; H01L21/28
摘要：
A pressure sensor having a second semiconductor layer wherein is formed diffused resistance interconnections, an insulating layer that is formed on top of the second semiconductor layer, and external conducting portions that are formed on top of the insulating layer, wherein contacts for connecting electrically between the external conducting portions and the diffused resistance interconnections are formed in the insulating layer, and wherein the external conducting portions are formed in ranges corresponding to the ranges wherein the diffused resistance interconnections are formed in the second semiconductor layer.
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