发明申请
- 专利标题： POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS
- 专利标题（中）： 积极抵抗组成和图案形成过程
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申请号： US12786013申请日： 2010-05-24
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公开(公告)号： US20110003251A1公开(公告)日： 2011-01-06
- 发明人: Akinobu TANAKA , Keiichi MASUNAGA , Daisuke DOMON , Satoshi WATANABE
- 申请人： Akinobu TANAKA , Keiichi MASUNAGA , Daisuke DOMON , Satoshi WATANABE
- 申请人地址： JP Tokyo
- 专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-156784 20090701
- 主分类号： G03F7/004
- IPC分类号： G03F7/004 ; G03F7/20
摘要：
The present invention relates to a positive resist composition and to a pattern forming process using the same. The present invention provides: a positive resist composition having an enhanced etching resistance and an excellent resolution and being capable of providing an excellent pattern profile even at a substrate-side boundary face of resist, in photolithography for fine processing, and particularly in lithography adopting, as an exposure source, KrF laser, extreme ultraviolet rays, electron beam, X-rays, or the like; and a pattern forming process utilizing the positive resist composition.
公开/授权文献
- US08389201B2 Positive resist composition and pattern forming process 公开/授权日：2013-03-05
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