发明申请
- 专利标题： EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURE OF EXPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE
- 专利标题（中）： 外延SiC单晶基板及其制造方法SiC单晶基板
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申请号： US12677255申请日： 2008-09-12
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公开(公告)号： US20110006309A1公开(公告)日： 2011-01-13
- 发明人: Kenji Momose , Michiya Odawara , Keiichi Matsuzawa , Hajime Okumura , Kazutoshi Kojima , Yuuki Ishida , Hidekazu Tsuchida , Isaho Kamata
- 申请人： Kenji Momose , Michiya Odawara , Keiichi Matsuzawa , Hajime Okumura , Kazutoshi Kojima , Yuuki Ishida , Hidekazu Tsuchida , Isaho Kamata
- 申请人地址： JP Minato-ku, Tokyo
- 专利权人： SHOWA DENKO K.K.
- 当前专利权人： SHOWA DENKO K.K.
- 当前专利权人地址： JP Minato-ku, Tokyo
- 优先权： JP2007-236661 20070912; JP2008-211757 20080820
- 国际申请： PCT/JP2008/066571 WO 20080912
- 主分类号： H01L29/24
- IPC分类号： H01L29/24 ; H01L21/20
摘要：
An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm2 or less.
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