公开(公告)号：US20140175461A1

公开(公告)日：2014-06-26

申请号：US14240662

申请日：2012-09-04

Applicant: Kenji Momose ,  Michiya Odawara ,  Daisuke Muto ,  Yoshiaki Kageshima

Inventor： Kenji Momose ,  Michiya Odawara ,  Daisuke Muto ,  Yoshiaki Kageshima

IPC: H01L21/02 ,  H01L29/16

CPC classification number: H01L21/02617 ,  C30B25/186 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02024 ,  H01L21/02046 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02658 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/32

Abstract: Provided are a SiC epitaxial wafer in which the surface density of stacking faults is reduced, and a manufacturing method thereof. The method for manufacturing such a SiC epitaxial wafer comprises a step of determining a ratio of basal plane dislocations (BPD), which causes stacking faults in a SiC epitaxial film of a prescribed thickness which is formed on a SiC single crystal substrate having an off angle, to basal plane dislocations which are present on a growth surface of the SiC single crystal substrate, a step of determining an upper limit of surface density of basal plane dislocations on the growth surface of a SiC single crystal substrate used based on the above ratio, and a step of preparing a SiC single crystal substrate which has surface density equal to or less than the above upper limit, and forming a SiC epitaxial film on the SiC single crystal substrate under the same conditions as the growth conditions of the epitaxial film used in the step of determining the ratio.

Abstract translation: 提供了一种其中堆垛层错密度降低的SiC外延晶片及其制造方法。 制造这种SiC外延晶片的方法包括确定基板面位错比（BPD）的步骤，其导致形成在具有偏角的SiC单晶衬底上的规定厚度的SiC外延膜中的堆垛层错 存在于SiC单晶基板的生长面上的基面位错，基于上述比例确定使用的SiC单晶基板的生长面上的基面位错的表面密度的上限的步骤， 以及制备具有等于或小于上述上限的表面密度的SiC单晶衬底的步骤，并且在与所述SiC单晶衬底中使用的外延膜的生长条件相同的条件下，在SiC单晶衬底上形成SiC外延膜 确定比例的步骤。

公开(公告)号：US5698062A

公开(公告)日：1997-12-16

申请号：US533383

申请日：1995-09-25

Applicant: Takao Sakamoto ,  Kazuhiro Tahara ,  Kenji Momose ,  Kosuke Imafuku ,  Shosuke Endo ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose

Inventor： Takao Sakamoto ,  Kazuhiro Tahara ,  Kenji Momose ,  Kosuke Imafuku ,  Shosuke Endo ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose

IPC: C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/509 ,  C23C16/517 ,  H01J37/32 ,  C23F1/02 ,  C23C14/34 ,  C23C16/00

CPC classification number: C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244

Abstract: A plasma treatment apparatus comprising a chamber earthed, a vacuum pump for exhausting the chamber, a suscepter on which a wafer is mounted, a shower electrode arranged in the chamber, opposing to the suscepter, a unit for supplying plasma generating gas to the wafer on the suscepter through the shower electrode, a first radio frequency power source for adding radio frequency voltage, which has a first frequency f.sub.1, to both of the suscepter and the shower electrode, a second radio frequency power source for adding radio frequency voltage, which has a second frequency f.sub.2 higher than the first frequency f.sub.1, at least to one of the suscepter and the shower electrode, a transformer whose primary side is connected to the first radio frequency power source and whose secondary side to first and second electrodes, and a low pass filter arranged in a circuit on the secondary side of the transformer, and serving to allow radio frequency voltage, which has the first frequency f.sub.1, to pass through it but to cut off radio frequency voltage, which has the second frequency f.sub.2, while plasma is being generated.

Abstract translation: 一种等离子体处理装置，包括接地室，用于排出室的真空泵，安装有晶片的可动装置，布置在室中的与电容器相对的喷淋电极，用于向晶片供给等离子体产生气体的单元 通过淋浴电极的检测器，将具有第一频率f1的射频电压的第一射频电源提供给所述吸入器和淋浴电极，所述第二射频电源用于增加射频电压，所述第二射频电源具有 比第一频率f1高的第二频率f2，至少一个至少一个所述电动机和所述淋浴电极，其一次侧连接到所述第一射频电源并且其次级侧连接到所述第一和第二电极的变压器和低 布置在变压器的次级侧的电路中，并且用于使具有第一频率f1的射频电压通过 而是在等离子体产生时切断具有第二频率f2的射频电压。

公开(公告)号：US5246529A

公开(公告)日：1993-09-21

申请号：US755441

申请日：1991-09-05

Applicant: Yoshio Fukasawa ,  Kenji Momose

Inventor： Yoshio Fukasawa ,  Kenji Momose

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/32009 ,  H01J37/32321

Abstract: A workpiece is etched with a plasma. First, a chamber is provided in which a pair of electrodes are arranged parallel to each other at a distance. The electrodes define a plasma generation area therebetween. The workpiece is arranged in the chamber. The chamber is evacuated, and a desired plasma generation gas is introduced into the plasma generation area. Light having a wavelength of not more than 436 nm is radiated onto the gas in the plasma generation area for a predetermined period of time. Then, a high-frequency power is applied across the electrodes to generate a plasma from the plasma generation gas. The workpiece is etched with the generated plasma.

公开(公告)号：US09624602B2

公开(公告)日：2017-04-18

申请号：US14236272

申请日：2012-08-03

Applicant: Yoshiaki Kageshima ,  Daisuke Muto ,  Kenji Momose

Inventor： Yoshiaki Kageshima ,  Daisuke Muto ,  Kenji Momose

IPC: C30B25/02 ,  C30B29/36 ,  C30B25/10 ,  C30B25/12 ,  C23C16/44 ,  H01L21/02

CPC classification number: C30B25/02 ,  C23C16/4401 ,  C30B25/10 ,  C30B25/12 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529

Abstract: An epitaxial wafer manufacturing device, including a shield (12), which in addition to being removably attached inside a chamber, is arranged in close proximity to the lower surface of a top plate (3). The shield has a substrate (12a) having an opening (13) in the central portion thereof that forces a gas inlet (9) to face the inside of a reaction space (K), and a thin film (12b) that covers the lower surface of the substrate. The surface of the thin film has the shape of surface irregularities corresponding to fine surface irregularities formed in the lower surface of the substrate. When the shield has undergone thermal deformation as a result of being heated by heating means (8), deposits deposited on the lower surface of the shield are inhibited from falling off by the shape of the surface irregularities.

公开(公告)号：US09607832B2

公开(公告)日：2017-03-28

申请号：US14236951

申请日：2012-08-02

Applicant: Yoshiaki Kageshima ,  Tomoyuki Noguchi ,  Daisuke Muto ,  Kenji Momose

Inventor： Yoshiaki Kageshima ,  Tomoyuki Noguchi ,  Daisuke Muto ,  Kenji Momose

IPC: C30B25/02 ,  H01L21/02 ,  C30B29/36 ,  C30B25/08 ,  C23C16/44

CPC classification number: H01L21/02634 ,  C23C16/4401 ,  C30B25/08 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529

Abstract: Provided is an epitaxial wafer manufacturing device (1) that deposits and grows epitaxial layers on the surfaces of wafers W while supplying a raw material gas to a chamber, wherein a shield (12), arranged in close proximity to the lower surface of a top plate (3) so as to prevent deposits from being deposited on the lower surface of the top plate (3), is removably attached inside the chamber, has an opening (13) in the central portion thereof that forces a gas inlet (9) to face the inside of a reaction space K, and has a structure in which it is concentrically divided into a plurality of ring plates (16), (17) and (18) around the opening (13).

公开(公告)号：US08293623B2

公开(公告)日：2012-10-23

申请号：US12677255

申请日：2008-09-12

Applicant: Kenji Momose ,  Michiya Odawara ,  Keiichi Matsuzawa ,  Hajime Okumura ,  Kazutoshi Kojima ,  Yuuki Ishida ,  Hidekazu Tsuchida ,  Isaho Kamata

Inventor： Kenji Momose ,  Michiya Odawara ,  Keiichi Matsuzawa ,  Hajime Okumura ,  Kazutoshi Kojima ,  Yuuki Ishida ,  Hidekazu Tsuchida ,  Isaho Kamata

IPC: H01L21/20 ,  H01L21/36

CPC classification number: C23C16/46 ,  C23C16/325 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/0262

Abstract: An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm2 or less.

Abstract translation: 外延SiC单晶衬底，其包括主表面为c面的SiC单晶晶片或倾斜角度大于0度但小于10度的c面倾斜的表面;以及SiC外延膜 其形成在SiC单晶晶片的主表面上，其中形成在SiC外延膜中的穿线边缘位错阵列的位错阵列密度为10阵列/ cm 2以下。

公开(公告)号：US09287121B2

公开(公告)日：2016-03-15

申请号：US14240662

申请日：2012-09-04

Applicant: Kenji Momose ,  Michiya Odawara ,  Daisuke Muto ,  Yoshiaki Kageshima

Inventor： Kenji Momose ,  Michiya Odawara ,  Daisuke Muto ,  Yoshiaki Kageshima

IPC: H01L21/02 ,  C30B25/20 ,  C30B29/36 ,  C30B25/18 ,  H01L29/32 ,  H01L29/16 ,  H01L29/04

CPC classification number: H01L21/02617 ,  C30B25/186 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02024 ,  H01L21/02046 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02658 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/32

Abstract: A method of manufacturing a SiC epitaxial wafer wherein a SiC epitaxial layer is provided on a SiC single crystal substrate having an off angle. The method includes determining a ratio of basal plane dislocations (BPD) which cause stacking faults in a SiC epitaxial film of a prescribed thickness, to basal plane dislocations which are present on a growth surface of the SiC single crystal substrate, determining an upper limit of surface density of basal plane dislocations, preparing a SiC single crystal substrate which has surface density equal to or less than the above upper limit, and forming a SiC epitaxial film on the SiC single crystal substrate under the same conditions as the growth conditions of the epitaxial film used in the step of determining the ratio.

Abstract translation: 一种制造SiC外延晶片的方法，其中SiC外延层设置在具有偏角的SiC单晶衬底上。 该方法包括确定在SiC单晶衬底的生长表面上存在的SiC外延膜中引起堆垛层错的规定厚度的基底面位错比（BPD）与基面平面位错之比，确定上限 基面平面位错的表面密度，制备表面密度等于或小于上述上限的SiC单晶衬底，在与SiC外延层的生长条件相同的条件下，在SiC单晶衬底上形成SiC外延膜 电影用于确定比例的步骤。

公开(公告)号：US20140190400A1

公开(公告)日：2014-07-10

申请号：US14236951

申请日：2012-08-02

Applicant: Yoshiaki Kageshima ,  Tomoyuki Noguchi ,  Daisuke Muto ,  Kenji Momose

Inventor： Yoshiaki Kageshima ,  Tomoyuki Noguchi ,  Daisuke Muto ,  Kenji Momose

IPC: H01L21/02 ,  C30B25/08

CPC classification number: H01L21/02634 ,  C23C16/4401 ,  C30B25/08 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529

Abstract: Provided is an epitaxial wafer manufacturing device (1) that deposits and grows epitaxial layers on the surfaces of wafers W while supplying a raw material gas to a chamber, wherein a shield (12), arranged in close proximity to the lower surface of a top plate (3) so as to prevent deposits from being deposited on the lower surface of the top plate (3), is removably attached inside the chamber, has an opening (13) in the central portion thereof that forces a gas inlet (9) to face the inside of a reaction space K, and has a structure in which it is concentrically divided into a plurality of ring plates (16), (17) and (18) around the opening (13).

Abstract translation: 提供了一种外延晶片制造装置（1），其在将原料气体供应到室中的同时，在晶片W的表面上沉积和生长外延层，其中屏蔽（12）布置成靠近顶部的下表面 板（3），以防止沉积物沉积在顶板（3）的下表面上，可移除地附接在室内，在其中心部分具有迫使气体入口（9）的开口（13） 面对反应空间K的内部，并且具有其周围围绕开口（13）同心地分为多个环板（16），（17）和（18）的结构。

公开(公告)号：US20140145214A1

公开(公告)日：2014-05-29

申请号：US14233289

申请日：2012-07-12

Applicant: Yoshiaki Kageshima ,  Daisuke Muto ,  Kenji Momose ,  Yoshihiko Miyasaka

Inventor： Yoshiaki Kageshima ,  Daisuke Muto ,  Kenji Momose ,  Yoshihiko Miyasaka

IPC: C30B25/16 ,  H01L29/16 ,  C30B25/12 ,  H01L29/34

CPC classification number: H01L21/681 ,  C23C16/325 ,  C23C16/4401 ,  C23C16/52 ,  C30B25/02 ,  C30B25/12 ,  C30B25/16 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/1608 ,  H01L29/34

Abstract: A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SIC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.

Abstract translation: 本发明的SiC外延晶片制造方法包括：使用SIC外延晶片制造装置，在SiC单晶晶片的表面上制造包括SiC外延层的SiC外延晶片，同时将原料气体供给到室内; 并且在测量由先前制造的SiC外延晶片的SiC外延层上的室的内部部件的材料的三角形缺陷的表面密度测量后制造随后的SiC外延晶片。

公开(公告)号：US20120146056A1

公开(公告)日：2012-06-14

申请号：US13392348

申请日：2010-08-25

Applicant: Kenji Momose ,  Yutaka Tajima ,  Yasuyuki Sakaguchi ,  Michiya Odawara ,  Yoshihiko Miyasaka

Inventor： Kenji Momose ,  Yutaka Tajima ,  Yasuyuki Sakaguchi ,  Michiya Odawara ,  Yoshihiko Miyasaka

IPC: H01L29/161 ,  H01L21/20

CPC classification number: H01L29/0684 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/1608

Abstract: Provided is a silicon carbide epitaxial wafer, the entire surface of which is free of step bunching. Also provided is a method for manufacturing said silicon carbide epitaxial wafer. The provided method for manufacturing a silicon carbide semiconductor device includes: a step wherein a 4H—SiC single-crystal substrate having an off-axis angle of 5° or less is polished until the lattice disorder layer on the surface of the substrate is 3 nm or less; a step wherein, in a hydrogen atmosphere, the polished substrate is brought to a temperature between 1400° C. and 1600° C. and the surface of the substrate is cleaned; a step wherein silicon carbide is epitaxially grown on the surface of the cleaned substrate as the amounts of SiH4 gas and C3H8 gas considered necessary for epitaxially growing silicon carbide are supplied simultaneously at a carbon-to-silicon concentration ratio between 0.7 and 1.2 to 1; and a step wherein the supply of SiH4 gas and the supply of C3H8 gas are cut off simultaneously, the substrate temperature is maintained until the SiH4 gas and the C3H8 gas are evacuated, and then the temperature is decreased.

Abstract translation: 提供了一种碳化硅外延晶片，其整个表面没有步骤聚束。 还提供了制造所述碳化硅外延晶片的方法。 提供的制造碳化硅半导体器件的方法包括：抛光离轴角为5°或更小的4H-SiC单晶衬底，直到衬底表面上的晶格紊乱层为3nm 或更少; 在氢气氛中将抛光后的基板升温至1400℃〜1600℃，清洗基板表面的工序; 以0.7〜1.2:1的碳 - 硅浓度比同时供给认为外延生长碳化硅所必需的SiH 4气体和C 3 H 8气体的量，在清洗后的基板的表面上外延生长碳化硅的工序; 并且同时切断供给SiH 4气体和供给C 3 H 8气体的步骤，保持基板温度，直到SiH 4气体和C 3 H 8气体被抽真空，然后降低温度。