发明申请
US20110006369A1 FINFET TRANSISTOR WITH HIGH-VOLTAGE CAPABILITY AND CMOS-COMPATIBLE METHOD FOR FABRICATING THE SAME
有权
具有高电压能力的FINFET晶体管和用于制造它的CMOS兼容方法
- 专利标题： FINFET TRANSISTOR WITH HIGH-VOLTAGE CAPABILITY AND CMOS-COMPATIBLE METHOD FOR FABRICATING THE SAME
- 专利标题（中）： 具有高电压能力的FINFET晶体管和用于制造它的CMOS兼容方法
-
申请号： US12933414申请日： 2009-03-20
-
公开(公告)号： US20110006369A1公开(公告)日： 2011-01-13
- 发明人: Jan Sonsky , Anco Heringa
- 申请人： Jan Sonsky , Anco Heringa
- 申请人地址： NL Eindhoven
- 专利权人： NXP B.V.
- 当前专利权人： NXP B.V.
- 当前专利权人地址： NL Eindhoven
- 优先权： EP08102836.7 20080320; IBPCT/IB2009/051183 20090320
- 国际申请： PCT/IB09/51183 WO 20090320
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/336
摘要：
The present invention relates to a method for fabricating a FinFET on a substrate. The method comprises providing a substrate with an active semiconductor layer on an insulator layer, and concurrently fabricating trench isolation regions in the active semiconductor layer for electrically isolating different active regions in the active semiconductor layer from each other, and trench gate-isolation regions in the active semiconductor layer for electrically isolating at least one gate region of the FinFET in the active semiconductor layer from a fin-shaped channel region of the FinFET in the active semiconductor layer.
公开/授权文献
信息查询
IPC分类:
