发明申请
- 专利标题: HYBRID BUMP CAPACITOR
- 专利标题(中): 混合电容器
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申请号: US12885722申请日: 2010-09-20
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公开(公告)号: US20110006395A1公开(公告)日: 2011-01-13
- 发明人: Yikui (Jen) Dong , Steven L. Howard , Freeman Y. Zhong , David S. Lowrie
- 申请人: Yikui (Jen) Dong , Steven L. Howard , Freeman Y. Zhong , David S. Lowrie
- 主分类号: H01L29/92
- IPC分类号: H01L29/92 ; H01L21/02
摘要:
A device fabricated on a chip is disclosed. The device generally includes (A) a first pattern and a second pattern both created in an intermediate conductive layer of the chip, (B) at least one via created in an insulating layer above the intermediate conductive layer and (C) a first bump created in a top conductive layer above the insulating layer. The first pattern generally establishes a first of a plurality of plates of a first capacitor. The via may be aligned with the second pattern. The first bump may (i) be located directly above the first plate, (ii) establish a second of the plates of the first capacitor, (iii) be suitable for flip-chip bonding, (iv) connect to the second pattern through the via such that both of the plates of the first capacitor are accessible in the intermediate conductive layer. The first pattern and the second pattern may be shaped as interlocking combs.
公开/授权文献
- US08384226B2 Hybrid bump capacitor 公开/授权日:2013-02-26
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