发明申请
US20110011447A1 Method of Forming A Ceramic Silicon Oxide Type Coating, Method of Producing An Inorganic Base Material, Agent For Forming A Ceramic Silicon Oxide Type Coating, and Semiconductor Device
审中-公开
形成陶瓷氧化硅类型涂层的方法，生产无机基材的方法，形成陶瓷氧化硅类涂层的涂料和半导体装置
- 专利标题： Method of Forming A Ceramic Silicon Oxide Type Coating, Method of Producing An Inorganic Base Material, Agent For Forming A Ceramic Silicon Oxide Type Coating, and Semiconductor Device
- 专利标题（中）： 形成陶瓷氧化硅类型涂层的方法，生产无机基材的方法，形成陶瓷氧化硅类涂层的涂料和半导体装置
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申请号： US12681521申请日： 2008-10-03
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公开(公告)号： US20110011447A1公开(公告)日： 2011-01-20
- 发明人: Yukinari Harimoto , Tetsuyuki Michino , Dimitris Elias Katsoulis , Nobuo Kushibiki , Michitaka Suto
- 申请人： Yukinari Harimoto , Tetsuyuki Michino , Dimitris Elias Katsoulis , Nobuo Kushibiki , Michitaka Suto
- 优先权： JP2007-262513 20071005
- 国际申请： PCT/JP2008/068509 WO 20081003
- 主分类号： H01L31/0216
- IPC分类号： H01L31/0216 ; B05D3/04 ; B05D3/02 ; C08L83/06
摘要：
A method of forming a ceramic silicon oxide type coating and a method of producing an inorganic base material having this coating, by coating an organohydrogensiloxane/hydrogensiloxane copolymer on the surface of an inorganic base material and converting the coating into a ceramic silicon oxide type coating by heating to high temperatures in an inert gas or an oxygen-containing inert gas (oxygen gas less than 20 volume %). A coating-forming agent comprising an organohydrogensiloxane/hydrogensiloxane copolymer or its solution. A semiconductor device comprising at least a semiconductor layer formed on a silicon oxide type coating on an inorganic substrate.