To provide a method for producing a method for producing a low-resistance and high-transmittance indium-oxide-based transparent conductive film readily obtained through crystallization, the method employing an amorphous film which can easily be patterned through etching with a weak acid.The method of the invention includes a step of confirming that a sputtering target which is provided and which contains indium oxide and an additive element can deposit an amorphous film at a predetermined film deposition temperature, and that the deposited amorphous film can be crystallized through annealing at a predetermined annealing temperature; a step of determining, as a film deposition oxygen partial pressure, an oxygen partial pressure at which a crystallized film obtained through annealing at the predetermined annealing temperature has the lowest resistivity, which oxygen partial pressure differs from an optimum oxygen partial pressure at which the amorphous film deposited at the predetermined film deposition temperature has the lowest resistivity; a step of depositing an amorphous film through sputtering the sputtering target at the film deposition oxygen partial pressure; and a step of crystallizing the amorphous film through annealing at the predetermined annealing temperature, to thereby form an indium-oxide-based transparent conductive film.