发明申请
US20110012124A1 Metal-Induced Crystallization of Amorphous Silicon in Thin Film Transistors
有权
非晶硅金属诱导结晶在薄膜晶体管中的应用
- 专利标题： Metal-Induced Crystallization of Amorphous Silicon in Thin Film Transistors
- 专利标题（中）： 非晶硅金属诱导结晶在薄膜晶体管中的应用
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申请号： US12841316申请日： 2010-07-22
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公开(公告)号： US20110012124A1公开(公告)日： 2011-01-20
- 发明人: Hoi Sing Kwok , Man Wong , Zhiguo Meng , Shuyun Zhao , Chunya Wu
- 申请人： Hoi Sing Kwok , Man Wong , Zhiguo Meng , Shuyun Zhao , Chunya Wu
- 主分类号： H01L33/08
- IPC分类号： H01L33/08 ; H01L21/8234
摘要：
The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin film on to a substrate; depositing a second layer of thin film on to the first layer of amorphous semiconducting thin film; patterning the second layer of thin film so that the first layer of amorphous semiconducting thin film is exposed at selected locations; exposing the first and second layers of thin film to a nickel containing compound in either a solution or a vapor phase ; removing the second layer of thin film; and annealing the first layer of amorphous semiconducting thin film at an elevated temperature so the first layer of amorphous semiconducting thin film converts into a polycrystalline semiconducting thin film.
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