发明申请
- 专利标题： POWER SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 功率半导体模块及其制造方法
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申请号： US12551238申请日： 2009-08-31
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公开(公告)号： US20110012252A1公开(公告)日： 2011-01-20
- 发明人: Shan GAO , Seog Moon Choi , Tae Hyun Kim , Ju Pyo Hong , Bum Sik Jang , Ji Hyun Park
- 申请人： Shan GAO , Seog Moon Choi , Tae Hyun Kim , Ju Pyo Hong , Bum Sik Jang , Ji Hyun Park
- 优先权： KR10-2009-0066060 20090720
- 主分类号： H01L23/46
- IPC分类号： H01L23/46 ; H01L23/48 ; H01L21/50
摘要：
Disclosed herein is a power semiconductor module. The module includes metal plates each having a first through hole, with an anodic oxidation layer formed on a surface of metal plates and an interior of the first through hole. A cooling member has a second through hole at a position corresponding to the first through hole, and the metal plates are attached to both sides of the cooling member. A circuit layer is formed on the anodic oxidation layer and performs an interlayer connection through a via formed in the first and second through holes. A power device is connected to the circuit layer. A resin encapsulant encloses the circuit layer and the power device. A housing is installed to each of the metal plates to form a sealing space for the resin encapsulant.