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发明申请
US20110013171A1 PROJECTION EXPOSURE SYSTEM FOR MICROLITHOGRAPHY WITH A MEASUREMENT DEVICE 有权
用于具有测量装置的微观计算的投影曝光系统

PROJECTION EXPOSURE SYSTEM FOR MICROLITHOGRAPHY WITH A MEASUREMENT DEVICE
摘要：
A projection exposure system (10) for microlithography which includes: a mask holding device (14) holding a mask (18) with mask structures (20) disposed on the mask, a substrate holding device (36) holding a substrate (30), projection optics (26) imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) disposed in a defined position with respect to a reference element (16) of the projection exposure system (10), which defined position is mechanically uncoupled from the position of the mask holding device (14). The projection exposure system (10) also includes a detector (52) arranged to record an image of the measurement structure (48) imaged by the projection optics (26). The projection exposure system (10) is configured such that during operation of the projection exposure system (10) the imaging of the mask structures (20) and the imaging of the measurement structure (48) take place at the same time by the projection optics (26. An evaluation device (54) is configured to establish a lateral position of the image of the measurement structure (48) in the area of the detector (52) during the exposure process.
摘要（中）：

一种用于微光刻的投影曝光系统（10），包括：保持掩模（18）的掩模保持装置（14），掩模结构（20）设置在掩模上;保持基板（30）的基板保持装置（36） 投影光学器件（26）在曝光过程期间将掩模结构（20）成像到衬底（30）上;以及测量结构（48），其相对于投影曝光系统的参考元件（16）设置在限定位置 10），所述限定位置与所述掩模保持装置（14）的位置机械地脱离。 投影曝光系统（10）还包括检测器（52），其被布置成记录由投影光学器件（26）成像的测量结构（48）的图像。 投影曝光系统（10）被配置为使得在投影曝光系统（10）的操作期间，掩模结构（20）的成像和测量结构（48）的成像同时由投影光学器件 （26）评估装置（54）被配置为在曝光处理期间在检测器（52）的区域中建立测量结构（48）的图像的横向位置。

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