发明申请
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
- 专利标题（中）： 非易失性半导体存储器件
-
申请号： US12726858申请日： 2010-03-18
-
公开(公告)号： US20110013454A1公开(公告)日： 2011-01-20
- 发明人: Tomoo Hishida , Yoshihisa Iwata , Megumi Ishiduki , Ryota Katsumata , Yoshiaki Fukuzumi , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Junya Matsunami , Tomoko Fujiwara , Hideaki Aochi , Ryouhel Kirisawa , Yoshimasa Mikajiri , Shigeto Oota
- 申请人： Tomoo Hishida , Yoshihisa Iwata , Megumi Ishiduki , Ryota Katsumata , Yoshiaki Fukuzumi , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Junya Matsunami , Tomoko Fujiwara , Hideaki Aochi , Ryouhel Kirisawa , Yoshimasa Mikajiri , Shigeto Oota
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-166499 20090715; JP2010-009221 20100119
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C11/34
摘要：
A nonvolatile semiconductor memory device comprises: a plurality of first memory strings; a first select transistor having one end thereof connected to one end of the first memory strings; a first line commonly connected to the other end of a plurality of the first select transistors; a switch circuit having one end thereof connected to the first line; and a second line commonly connected to the other end of a plurality of the switch circuits. The switch circuit controls electrical connection between the second line and the first line.
公开/授权文献
- US08169826B2 Nonvolatile semiconductor memory device 公开/授权日：2012-05-01
信息查询
